This paper describes a new 7-mask CMOS process using liquid phase oxide deposition which has selectivity against photoresist. The process modules for self-aligned well and one mask LDD formation are developed. The features of the process are 1) short TAT: 7 masks to first metallization, 2) self-aligned twin retrograde wells with 40% reduction of the p+-n+ spacing compared to conventional wells, and 3) optimal LDD design using different sidewall spacer width for n- and p-channel MOSFET’s giving a 10% larger on-current for p-channel MOSFET’s compared to a conventional process.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1993 Aug|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering