A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition

K.Kanba K.Kanba, T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)637-640
JournalProceedings of IEEE International Electron Devices Meeting
Publication statusPublished - 1991 Dec 8

Cite this

K.Kanba, K. K., T.Horiuchi, T. H., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O., & Homma, T. (1991). A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition. Proceedings of IEEE International Electron Devices Meeting, 637-640.

A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition. / K.Kanba, K.Kanba; T.Horiuchi, T.Horiuchi; T.Homma, T.Homma; Y.Murao, Y.Murao; K.Okumura, K.Okumura; Homma, Tetsuya.

In: Proceedings of IEEE International Electron Devices Meeting, 08.12.1991, p. 637-640.

Research output: Contribution to journalArticle

K.Kanba, K.Kanba ; T.Horiuchi, T.Horiuchi ; T.Homma, T.Homma ; Y.Murao, Y.Murao ; K.Okumura, K.Okumura ; Homma, Tetsuya. / A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition. In: Proceedings of IEEE International Electron Devices Meeting. 1991 ; pp. 637-640.
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