A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition

K.Kanba K.Kanba, T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	637-640
Journal	Proceedings of IEEE International Electron Devices Meeting
Publication status	Published - 1991 Dec 8

Cite this

@article{1885f24553094a2bb47617c450ba4846,

title = "A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition",

author = "K.Kanba K.Kanba and T.Horiuchi T.Horiuchi and T.Homma T.Homma and Y.Murao Y.Murao and K.Okumura K.Okumura and Tetsuya Homma",

year = "1991",

month = dec,

day = "8",

language = "English",

pages = "637--640",

journal = "Proceedings of IEEE International Electron Devices Meeting",

}

TY - JOUR

T1 - A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition

AU - K.Kanba, K.Kanba

AU - T.Horiuchi, T.Horiuchi

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - K.Okumura, K.Okumura

AU - Homma, Tetsuya

PY - 1991/12/8

Y1 - 1991/12/8

M3 - Article

SP - 637

EP - 640

JO - Proceedings of IEEE International Electron Devices Meeting

JF - Proceedings of IEEE International Electron Devices Meeting

ER -