A compact HBT device model based on a one-flux treatment of carrier transport

Shin ichi Tanaka, M. S. Lundstrom

Research output: Contribution to journalArticle

25 Citations (Scopus)


A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

Original languageEnglish
Pages (from-to)401-410
Number of pages10
JournalSolid State Electronics
Issue number3
Publication statusPublished - 1994 Mar


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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