A compact HBT device model based on a one-flux treatment of carrier transport

Shin ichi Tanaka; M. S. Lundstrom

doi:10.1016/0038-1101(94)90004-3

A compact HBT device model based on a one-flux treatment of carrier transport

Shin ichi Tanaka, M. S. Lundstrom

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

Original language	English
Pages (from-to)	401-410
Number of pages	10
Journal	Solid State Electronics
Volume	37
Issue number	3
DOIs	https://doi.org/10.1016/0038-1101(94)90004-3
Publication status	Published - 1994 Mar
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(94)90004-3

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abstract = "A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.",

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AU - Lundstrom, M. S.

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AB - A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

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A compact HBT device model based on a one-flux treatment of carrier transport

Abstract

ASJC Scopus subject areas

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