A compact HBT device model based on a one-flux treatment of carrier transport

Shinichi Tanaka, M. S. Lundstrom

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

Original languageEnglish
Pages (from-to)401-410
Number of pages10
JournalSolid State Electronics
Volume37
Issue number3
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Carrier transport
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Fluxes
Ballistics
ballistics
Physics
physics
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

A compact HBT device model based on a one-flux treatment of carrier transport. / Tanaka, Shinichi; Lundstrom, M. S.

In: Solid State Electronics, Vol. 37, No. 3, 1994, p. 401-410.

Research output: Contribution to journalArticle

@article{10673812992d4174a5624f19806faac8,
title = "A compact HBT device model based on a one-flux treatment of carrier transport",
abstract = "A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.",
author = "Shinichi Tanaka and Lundstrom, {M. S.}",
year = "1994",
doi = "10.1016/0038-1101(94)90004-3",
language = "English",
volume = "37",
pages = "401--410",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - A compact HBT device model based on a one-flux treatment of carrier transport

AU - Tanaka, Shinichi

AU - Lundstrom, M. S.

PY - 1994

Y1 - 1994

N2 - A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

AB - A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

UR - http://www.scopus.com/inward/record.url?scp=0028396709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028396709&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(94)90004-3

DO - 10.1016/0038-1101(94)90004-3

M3 - Article

VL - 37

SP - 401

EP - 410

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -