A comparison of the structural evolution induced by changing the hole-doping level in three series (Hg, Tl)-22(n - 1)n (n = 2, 3) samples

X. J. Wu, A. Tokiwa-Yamamoto, T. Tatsuki, K. Tanabe

Research output: Contribution to journalReview article

2 Citations (Scopus)

Abstract

Three series of (Hg, Tl)-22(n - 1)n (n = 2, 3) samples were synthesized by a high-pressure technique. One series of samples was prepared by substituting Y for the Ca site in (Hg0.7, Tl0.3)2Ba2(Yx, Ca1-x)Cu2O8-2δ (x = 0.4, 0.6, 0.8 and 0.9), while two other series were prepared by annealing (Hg0.7, Tl0.3)2Ba2(Y0.8, Ca0.2)Cu2O8-2δ and (Hg0.6, Tl0.4)2Ba2Ca2Cu3O 10-2δ samples in Ar. The crystal structures of the samples were determined by x-ray Rietveld refinement. The variation tendencies of their lattice parameters as well as several particular inter-planar distances with the change of the hole doping level in these three series were investigated and compared with one another. Based on the comparison, a qualitative explanation for the structural evolution tendency under hole doping for these series was proposed.

Original languageEnglish
Pages (from-to)1079-1089
Number of pages11
JournalSuperconductor Science and Technology
Volume13
Issue number7
DOIs
Publication statusPublished - 2000 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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