A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma; M.Suzuki M.Suzuki; Y.Murao Y.Murao; Tetsuya Homma

A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma, M.Suzuki M.Suzuki, Y.Murao Y.Murao, Tetsuya Homma

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3591-3599
Journal	Journal of the Electrochemical Society
Volume	140
Publication status	Published - 1993 Dec 1

Cite this

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title = "A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure",

author = "T.Homma T.Homma and M.Suzuki M.Suzuki and Y.Murao Y.Murao and Tetsuya Homma",

year = "1993",

month = dec,

day = "1",

language = "English",

volume = "140",

pages = "3591--3599",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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T1 - A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

AU - T.Homma, T.Homma

AU - M.Suzuki, M.Suzuki

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/12/1

Y1 - 1993/12/1

M3 - Article

VL - 140

SP - 3591

EP - 3599

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

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