A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma; M.Suzuki M.Suzuki; Y.Murao Y.Murao; Tetsuya Homma

A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma, M.Suzuki M.Suzuki, Y.Murao Y.Murao, Tetsuya Homma

Functional Control Systems

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	3591-3599
Journal	Journal of the Electrochemical Society
Volume	140
Publication status	Published - 1993 Dec 1

Cite this

T.Homma, T. H., M.Suzuki, M. S., Y.Murao, Y. M., & Homma, T. (1993). A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure. Journal of the Electrochemical Society, 140, 3591-3599.

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author = "T.Homma T.Homma and M.Suzuki M.Suzuki and Y.Murao Y.Murao and Tetsuya Homma",

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