A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma, M.Suzuki M.Suzuki, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journalArticle

11 Citations (Scopus)
Original languageEnglish
Pages (from-to)3591-3599
JournalJournal of the Electrochemical Society
Volume140
Publication statusPublished - 1993 Dec 1

Cite this

A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure. / T.Homma, T.Homma; M.Suzuki, M.Suzuki; Y.Murao, Y.Murao; Homma, Tetsuya.

In: Journal of the Electrochemical Society, Vol. 140, 01.12.1993, p. 3591-3599.

Research output: Contribution to journalArticle

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