| Original language | English |
|---|---|
| Pages (from-to) | 3591-3599 |
| Journal | Journal of the Electrochemical Society |
| Volume | 140 |
| Publication status | Published - 1993 Dec 1 |
Cite this
T.Homma, T. H., M.Suzuki, M. S., Y.Murao, Y. M., & Homma, T. (1993). A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure. Journal of the Electrochemical Society, 140, 3591-3599.
A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure. / T.Homma, T.Homma; M.Suzuki, M.Suzuki; Y.Murao, Y.Murao; Homma, Tetsuya.
In: Journal of the Electrochemical Society, Vol. 140, 01.12.1993, p. 3591-3599.Research output: Contribution to journal › Article
T.Homma, TH, M.Suzuki, MS, Y.Murao, YM & Homma, T 1993, 'A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure', Journal of the Electrochemical Society, vol. 140, pp. 3591-3599.
T.Homma TH, M.Suzuki MS, Y.Murao YM, Homma T. A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure. Journal of the Electrochemical Society. 1993 Dec 1;140:3591-3599.
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title = "A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure",
author = "T.Homma T.Homma and M.Suzuki M.Suzuki and Y.Murao Y.Murao and Tetsuya Homma",
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