A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD

M. Suzuki, Tetsuya Homma, H. Koga, T. Tanigawa, Y. Murao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new interlayer dielectric film planarization technology for sub-half-micron multilevel interconnections has been developed. This technology utilizes a new selective TEOS-Ozone APCVD SiO2 film formation technique which can be realized by differences in surface adsorption properties and flow characteristics of siloxane oligomers. The deposition rate can be reduced by putting Ti or its alloy metal films such as TiN and TiW on top of Al wirings. These metal films can reduce the oligomer adsorption and assist the oligomer flow into the spacings between Al wirings. Furthermore, the selectivity is enhanced by a CF4 gas plasma pre-treatment, even on top of the W films. The TEOS-Ozone APCVD SiO2 films deposited on the Ti/Al, TiN/Al, TiW/Al or W/Al wirings with the CF4 pre-treatment were more than 40% thinner than those on PECVD SiO2 under-layers. Higher capability for both local and global planarization of interlayer dielectrics was confirmed in a multilevel metallization scheme in the double-level Al interconnection technology with the 0.6 mu m design rule and in a prototype 64M DRAM fabrications.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages293-296
Number of pages4
ISBN (Electronic)0780308174
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 1992 Dec 131992 Dec 16

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period92/12/1392/12/16

Fingerprint

Ozone
ozone
wiring
oligomers
Electric wiring
Oligomers
metal films
pretreatment
interlayers
Metals
adsorption
Plasma Gases
siloxanes
flow characteristics
Siloxanes
Adsorption
Dielectric films
Dynamic random access storage
Plasma enhanced chemical vapor deposition
Metallizing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Suzuki, M., Homma, T., Koga, H., Tanigawa, T., & Murao, Y. (1992). A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 293-296). [307363] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307363

A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD. / Suzuki, M.; Homma, Tetsuya; Koga, H.; Tanigawa, T.; Murao, Y.

1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 293-296 307363 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suzuki, M, Homma, T, Koga, H, Tanigawa, T & Murao, Y 1992, A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307363, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 293-296, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 92/12/13. https://doi.org/10.1109/IEDM.1992.307363
Suzuki M, Homma T, Koga H, Tanigawa T, Murao Y. A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 293-296. 307363. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1992.307363
Suzuki, M. ; Homma, Tetsuya ; Koga, H. ; Tanigawa, T. ; Murao, Y. / A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD. 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 293-296 (Technical Digest - International Electron Devices Meeting, IEDM).
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