A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition

T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)88-89
Journal1992 Symposium on VLSI Technology, Technical Digest
Publication statusPublished - 1992 Jun 2

Cite this

A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition. / T.Horiuchi, T.Horiuchi; T.Homma, T.Homma; Y.Murao, Y.Murao; K.Okumura, K.Okumura; Homma, Tetsuya.

In: 1992 Symposium on VLSI Technology, Technical Digest, 02.06.1992, p. 88-89.

Research output: Contribution to journalArticle

T.Horiuchi, T.Horiuchi ; T.Homma, T.Homma ; Y.Murao, Y.Murao ; K.Okumura, K.Okumura ; Homma, Tetsuya. / A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition. In: 1992 Symposium on VLSI Technology, Technical Digest. 1992 ; pp. 88-89.
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