A high-power-handling GSM switch IC with new adaptive-control-voltage-generator circuit scheme

Keiichi Numata, Yuji Takahashi, Tadashi Maeda, Hikaru Hida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We propose a high-power-handling switch circuit using a new adaptive-control-voltage-generator circuit (AVG). This AVG enables the internal control node voltages to be automatically increased in high-input-power conditions. This switch circuit results in high-power-handling, low-insertion-loss, small chip size and low voltage control. The developed IC demonstrated a handling power of 36.5 dBm and an insertion loss of 0.31 dB with 40% chip size reduction.

Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
EditorsT. Quach
Pages233-236
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
Event2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States
Duration: 2003 Jun 82003 Jun 10

Other

Other2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityPhiladelphia, PA
Period03/6/803/6/10

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ASJC Scopus subject areas

  • Media Technology
  • Electrical and Electronic Engineering

Cite this

Numata, K., Takahashi, Y., Maeda, T., & Hida, H. (2003). A high-power-handling GSM switch IC with new adaptive-control-voltage-generator circuit scheme. In T. Quach (Ed.), IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 233-236)