A high reliability copper dual-damascene interconnection with direct-contact via structure

K. Ueno, M. Suzuki, A. Matsumoto, K. Motoyama, T. Tonegawa, N. Ito, K. Arita, Y. Tsuchiya, T. Wake, A. Kubo, K. Sugai, N. Oda, H. Miyamoto, S. Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages265-268
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

Other

Other2000 IEEE International Electron Devices Meeting
CountryUnited States
CitySan Francisco, CA
Period00/12/1000/12/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ueno, K., Suzuki, M., Matsumoto, A., Motoyama, K., Tonegawa, T., Ito, N., ... Saito, S. (2000). A high reliability copper dual-damascene interconnection with direct-contact via structure. In Technical Digest - International Electron Devices Meeting (pp. 265-268)