A high reliability copper dual-damascene interconnection with direct-contact via structure

K. Ueno, M. Suzuki, A. Matsumoto, K. Motoyama, T. Tonegawa, N. Ito, K. Arita, Y. Tsuchiya, T. Wake, A. Kubo, K. Sugai, N. Oda, H. Miyamoto, S. Saito

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)

Abstract

Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000 Dec 1
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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