A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited)

K.Ueno K.Ueno, M.Suzuki M.Suzuki, A.Mtsumoto A.Mtsumoto, K.Motoyama K.Motoyama, N.Oda N.Oda, H.Miyamoto H.Miyamoto, S.Ssaito S.Ssaito, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)49-60
JournalStress-Induced Phenomena in Metallization, AIP Conf. Proceedings
Volume612
Publication statusPublished - 2001 Jul 1

Cite this

K.Ueno, K. U., M.Suzuki, M. S., A.Mtsumoto, A. M., K.Motoyama, K. M., N.Oda, N. O., H.Miyamoto, H. M., ... Ueno, K. (2001). A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited). Stress-Induced Phenomena in Metallization, AIP Conf. Proceedings, 612, 49-60.

A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited). / K.Ueno, K.Ueno; M.Suzuki, M.Suzuki; A.Mtsumoto, A.Mtsumoto; K.Motoyama, K.Motoyama; N.Oda, N.Oda; H.Miyamoto, H.Miyamoto; S.Ssaito, S.Ssaito; Ueno, Kazuyoshi.

In: Stress-Induced Phenomena in Metallization, AIP Conf. Proceedings, Vol. 612, 01.07.2001, p. 49-60.

Research output: Contribution to journalArticle

K.Ueno, KU, M.Suzuki, MS, A.Mtsumoto, AM, K.Motoyama, KM, N.Oda, NO, H.Miyamoto, HM, S.Ssaito, SS & Ueno, K 2001, 'A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited)', Stress-Induced Phenomena in Metallization, AIP Conf. Proceedings, vol. 612, pp. 49-60.
K.Ueno KU, M.Suzuki MS, A.Mtsumoto AM, K.Motoyama KM, N.Oda NO, H.Miyamoto HM et al. A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited). Stress-Induced Phenomena in Metallization, AIP Conf. Proceedings. 2001 Jul 1;612:49-60.
K.Ueno, K.Ueno ; M.Suzuki, M.Suzuki ; A.Mtsumoto, A.Mtsumoto ; K.Motoyama, K.Motoyama ; N.Oda, N.Oda ; H.Miyamoto, H.Miyamoto ; S.Ssaito, S.Ssaito ; Ueno, Kazuyoshi. / A high reliability Cu dual-damascene interconnection direct- contact via structure(Invited). In: Stress-Induced Phenomena in Metallization, AIP Conf. Proceedings. 2001 ; Vol. 612. pp. 49-60.
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