A High-Speed Frequency Divider Using n+ -Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita; Makoto Hirano; Koichi Maezawa; Takashi Mizutani

doi:10.1109/EDL.1987.26611

A High-Speed Frequency Divider Using n⁺ -Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A high-speed divide-by-four static frequency divider is fabricated using n⁺-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.

Original language	English
Pages (from-to)	226-227
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1109/EDL.1987.26611
Publication status	Published - 1987 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/EDL.1987.26611

Cite this

@article{010cad68bee3429a9dfbbe126744e0d2,

title = "A High-Speed Frequency Divider Using n+ -Ge Gate AlGaAs/GaAs MISFET's",

abstract = "A high-speed divide-by-four static frequency divider is fabricated using n+-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.",

author = "Shuichi Fujita and Makoto Hirano and Koichi Maezawa and Takashi Mizutani",

year = "1987",

month = may,

doi = "10.1109/EDL.1987.26611",

language = "English",

volume = "8",

pages = "226--227",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - A High-Speed Frequency Divider Using n+ -Ge Gate AlGaAs/GaAs MISFET's

AU - Fujita, Shuichi

AU - Hirano, Makoto

AU - Maezawa, Koichi

AU - Mizutani, Takashi

PY - 1987/5

Y1 - 1987/5

N2 - A high-speed divide-by-four static frequency divider is fabricated using n+-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.

AB - A high-speed divide-by-four static frequency divider is fabricated using n+-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.

UR - http://www.scopus.com/inward/record.url?scp=0023345113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023345113&partnerID=8YFLogxK

U2 - 10.1109/EDL.1987.26611

DO - 10.1109/EDL.1987.26611

M3 - Article

AN - SCOPUS:0023345113

SN - 0741-3106

VL - 8

SP - 226

EP - 227

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

A High-Speed Frequency Divider Using n⁺ -Ge Gate AlGaAs/GaAs MISFET's

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this