A High-Speed Frequency Divider Using n+ -Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)


    A high-speed divide-by-four static frequency divider is fabricated using n+-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.

    Original languageEnglish
    Pages (from-to)226-227
    Number of pages2
    JournalIEEE Electron Device Letters
    Issue number5
    Publication statusPublished - 1987 May

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering


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