A high-speed low-power tri-state driver flip flop for ultra-low supply voltage GaAs heterojunction FET LSI's

Tadashi Maeda, Keiichi Numata, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida, Yasuo Ohno

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper describes a low-supply-voltage flip flop circuit design. The advantages of low supply voltage are discussed. Based on an analytical circuit delay model, conventional flip flop operating speed degradation below 1 V supply voltage is analyzed. We then propose a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSI's. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FF's so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.

Original languageEnglish
Pages (from-to)240-246
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume31
Issue number2
DOIs
Publication statusPublished - 1996 Feb
Externally publishedYes

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Flip flop circuits
Field effect transistors
Heterojunctions
Electric potential
Electric power utilization
Delay circuits
Degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A high-speed low-power tri-state driver flip flop for ultra-low supply voltage GaAs heterojunction FET LSI's. / Maeda, Tadashi; Numata, Keiichi; Tokushima, Masatoshi; Ishikawa, Masaoki; Fukaishi, Muneo; Hida, Hikaru; Ohno, Yasuo.

In: IEEE Journal of Solid-State Circuits, Vol. 31, No. 2, 02.1996, p. 240-246.

Research output: Contribution to journalArticle

Maeda, Tadashi ; Numata, Keiichi ; Tokushima, Masatoshi ; Ishikawa, Masaoki ; Fukaishi, Muneo ; Hida, Hikaru ; Ohno, Yasuo. / A high-speed low-power tri-state driver flip flop for ultra-low supply voltage GaAs heterojunction FET LSI's. In: IEEE Journal of Solid-State Circuits. 1996 ; Vol. 31, No. 2. pp. 240-246.
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