A high transconductance GaAs MESFET with reduced short channel effect characteristics

K.Ueno K.Ueno, T.Furutsuka T.Furutsuka, H.Toyoshima H.Toyoshima, M.Kanamari M.Kanamari, A.Higashisaka A.Higashisaka, Kazuyoshi Ueno

Research output: Contribution to journalArticle

12 Citations (Scopus)
Original languageEnglish
Pages (from-to)82-85
Journal1985 IDEM Technical Digest
Publication statusPublished - 1985 Dec 1

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K.Ueno, K. U., T.Furutsuka, T. F., H.Toyoshima, H. T., M.Kanamari, M. K., A.Higashisaka, A. H., & Ueno, K. (1985). A high transconductance GaAs MESFET with reduced short channel effect characteristics. 1985 IDEM Technical Digest, 82-85.