A hysteresis loop in electrical resistance of NbH x observed above the β - λ transition temperature

Yuki Sasahara, Ryota Shimizu, Hiroyuki Oguchi, Kazunori Nishio, Shohei Ogura, Hitoshi Morioka, Shin Ichi Orimo, Katsuyuki Fukutani, Taro Hitosugi

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2 Citations (Scopus)

Abstract

We investigate the electron transport properties and structures of β-NbH x (010) epitaxial thin films on Al 2 O 3 (001) substrates with a variety of hydrogen contents. NbH x epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance near room temperature. Notably, this hysteresis loop appears above the β-λ phase transition temperature. Detailed analysis of the temperature dependence of these structures suggests that the short-range ordering of hydrogen rearrangement in the λ-phase remains locally above the transition temperature, inducing the hysteresis in the resistance.

Original languageEnglish
Article number015027
JournalAIP Advances
Volume9
Issue number1
DOIs
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Sasahara, Y., Shimizu, R., Oguchi, H., Nishio, K., Ogura, S., Morioka, H., Orimo, S. I., Fukutani, K., & Hitosugi, T. (2019). A hysteresis loop in electrical resistance of NbH x observed above the β - λ transition temperature AIP Advances, 9(1), [015027]. https://doi.org/10.1063/1.5066367