TY - JOUR
T1 - A low cost preparation of VO2 thin films with improved thermochromic properties from a solution-based process
AU - Zhao, Lili
AU - Miao, Lei
AU - Tanemura, Sakae
AU - Zhou, Jianhua
AU - Chen, Lihua
AU - Xiao, Xiudi
AU - Xu, Gang
N1 - Funding Information:
This work was supported by National Natural Science Foundation of China (Grant Nos. 51172234 & 51102235 ), Guangdong Provincial Department of Science and Technology (Grant No. 2011B010100043 ) and International Cooperation MOST-JST Program Fund (Grant No. 2010DFA61410 ).
PY - 2013/9/30
Y1 - 2013/9/30
N2 - This paper describes a solution-based route to synthesize vanadium dioxide (VO2) thermochromic thin films on glass substrate by spin-coating technology followed by nitrogen-annealing with vanadium pentoxide (V 2O5) and oxalic acid (H2C2O 4) as source material, which is fairly economical and practical. Surface morphologies indicate that the films obtained by this method are homogeneous and particulate, irregular prisms emerge as the annealing temperatures increase. X-ray diffractions show that films annealed at relatively low temperature are pure monoclinic phase with a preferred orientation of (011). NaV4O7 and NaV6O15 form along with raising the heating temperatures. VO2 films obtained exhibit excellent visible transparency and switching property at near-infrared wavelengths across the metal-semiconductor transition. Transmittance change at λ = 2000 nm of VO2 thin film annealed at 450 C attains as high as 41.5% and its solar modulation efficiency reaches up to 8.8%. The W-doped VO2 film at a doping level of 1 at.% exhibits a thermochromic switch at 37 C with a narrow hysteresis, which will greatly favor the practical application of VO2-based smart windows.
AB - This paper describes a solution-based route to synthesize vanadium dioxide (VO2) thermochromic thin films on glass substrate by spin-coating technology followed by nitrogen-annealing with vanadium pentoxide (V 2O5) and oxalic acid (H2C2O 4) as source material, which is fairly economical and practical. Surface morphologies indicate that the films obtained by this method are homogeneous and particulate, irregular prisms emerge as the annealing temperatures increase. X-ray diffractions show that films annealed at relatively low temperature are pure monoclinic phase with a preferred orientation of (011). NaV4O7 and NaV6O15 form along with raising the heating temperatures. VO2 films obtained exhibit excellent visible transparency and switching property at near-infrared wavelengths across the metal-semiconductor transition. Transmittance change at λ = 2000 nm of VO2 thin film annealed at 450 C attains as high as 41.5% and its solar modulation efficiency reaches up to 8.8%. The W-doped VO2 film at a doping level of 1 at.% exhibits a thermochromic switch at 37 C with a narrow hysteresis, which will greatly favor the practical application of VO2-based smart windows.
KW - Annealing temperatures
KW - Phase transition temperature
KW - Solution-based route
KW - Thermochromic property
KW - VO thin films
KW - W-doped
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U2 - 10.1016/j.tsf.2012.11.154
DO - 10.1016/j.tsf.2012.11.154
M3 - Article
AN - SCOPUS:84883188127
SN - 0040-6090
VL - 543
SP - 157
EP - 161
JO - Thin Solid Films
JF - Thin Solid Films
ER -