Abstract
This paper presents a millimeter-wave (mm-wave) pulse generator (PG) integrated with a new dipole-patch antenna in a 65-nm CMOS process for short range and portable active imaging applications. The integrated wide-band dipole-patch antenna is a combination of two type of radiators, patch and dipole, to exploit both advantages of the two antenna types. The {Mathematical expression} dipole-patch antenna in the top metal layer of the 65-nm CMOS process has a wide 30.2-GHz bandwidth from 73.9 to 104.1 GHz with minimum reflection coefficient of -29 dB at 101.6 GHz and resistance from 27.3 to 47.5 {Mathematical expression} by simulation in Momentum, ADS 2009. We proposed a resistor-less mm-wave damping PG whose peak-to-peak pulse output is 1.66-V with 9.1-ps duration in HSPICE simulation at the antenna input terminals. Radiation measurements by using a horn antenna and a Schottky diode placed at a 39-mm distance from the chip's surface show the main beam's peak at θ max = 17° with a half-power beam-width (HPBW) of 9° and the second beam's peak at θ sec = -23°. Maximum radiated powers in horizontal and vertical planes are respectively 2.4 and 0.5 μW.
| Original language | English |
|---|---|
| Pages (from-to) | 1-11 |
| Number of pages | 11 |
| Journal | Analog Integrated Circuits and Signal Processing |
| DOIs | |
| Publication status | Accepted/In press - 2012 |
| Externally published | Yes |
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Keywords
- Active imaging
- CMOS millimeter-wave integrated circuit
- On-chip wide-band antenna
- Pulse generator
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Signal Processing
- Hardware and Architecture
Cite this
A millimeter-wave resistor-less pulse generator with a new dipole-patch antenna in 65-nm CMOS. / Khanh, Nguyen Ngoc Mai; Sasaki, Masahiro; Asada, Kunihiro.
In: Analog Integrated Circuits and Signal Processing, 2012, p. 1-11.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A millimeter-wave resistor-less pulse generator with a new dipole-patch antenna in 65-nm CMOS
AU - Khanh, Nguyen Ngoc Mai
AU - Sasaki, Masahiro
AU - Asada, Kunihiro
PY - 2012
Y1 - 2012
N2 - This paper presents a millimeter-wave (mm-wave) pulse generator (PG) integrated with a new dipole-patch antenna in a 65-nm CMOS process for short range and portable active imaging applications. The integrated wide-band dipole-patch antenna is a combination of two type of radiators, patch and dipole, to exploit both advantages of the two antenna types. The {Mathematical expression} dipole-patch antenna in the top metal layer of the 65-nm CMOS process has a wide 30.2-GHz bandwidth from 73.9 to 104.1 GHz with minimum reflection coefficient of -29 dB at 101.6 GHz and resistance from 27.3 to 47.5 {Mathematical expression} by simulation in Momentum, ADS 2009. We proposed a resistor-less mm-wave damping PG whose peak-to-peak pulse output is 1.66-V with 9.1-ps duration in HSPICE simulation at the antenna input terminals. Radiation measurements by using a horn antenna and a Schottky diode placed at a 39-mm distance from the chip's surface show the main beam's peak at θ max = 17° with a half-power beam-width (HPBW) of 9° and the second beam's peak at θ sec = -23°. Maximum radiated powers in horizontal and vertical planes are respectively 2.4 and 0.5 μW.
AB - This paper presents a millimeter-wave (mm-wave) pulse generator (PG) integrated with a new dipole-patch antenna in a 65-nm CMOS process for short range and portable active imaging applications. The integrated wide-band dipole-patch antenna is a combination of two type of radiators, patch and dipole, to exploit both advantages of the two antenna types. The {Mathematical expression} dipole-patch antenna in the top metal layer of the 65-nm CMOS process has a wide 30.2-GHz bandwidth from 73.9 to 104.1 GHz with minimum reflection coefficient of -29 dB at 101.6 GHz and resistance from 27.3 to 47.5 {Mathematical expression} by simulation in Momentum, ADS 2009. We proposed a resistor-less mm-wave damping PG whose peak-to-peak pulse output is 1.66-V with 9.1-ps duration in HSPICE simulation at the antenna input terminals. Radiation measurements by using a horn antenna and a Schottky diode placed at a 39-mm distance from the chip's surface show the main beam's peak at θ max = 17° with a half-power beam-width (HPBW) of 9° and the second beam's peak at θ sec = -23°. Maximum radiated powers in horizontal and vertical planes are respectively 2.4 and 0.5 μW.
KW - Active imaging
KW - CMOS millimeter-wave integrated circuit
KW - On-chip wide-band antenna
KW - Pulse generator
UR - http://www.scopus.com/inward/record.url?scp=84864117999&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864117999&partnerID=8YFLogxK
U2 - 10.1007/s10470-012-9931-7
DO - 10.1007/s10470-012-9931-7
M3 - Article
AN - SCOPUS:84864117999
SP - 1
EP - 11
JO - Analog Integrated Circuits and Signal Processing
JF - Analog Integrated Circuits and Signal Processing
SN - 0925-1030
ER -