Abstract
A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
| Original language | English |
|---|---|
| Article number | 425305 |
| Journal | Nanotechnology |
| Volume | 20 |
| Issue number | 42 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)
Cite this
A nanosized photodetector fabricated by electron-beam-induced deposition. / Makise, K.; Mitsuishi, K.; Shimojo, Masayuki; Furuya, K.
In: Nanotechnology, Vol. 20, No. 42, 425305, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A nanosized photodetector fabricated by electron-beam-induced deposition
AU - Makise, K.
AU - Mitsuishi, K.
AU - Shimojo, Masayuki
AU - Furuya, K.
PY - 2009
Y1 - 2009
N2 - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
AB - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
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UR - http://www.scopus.com/inward/citedby.url?scp=70349706097&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/20/42/425305
DO - 10.1088/0957-4484/20/42/425305
M3 - Article
VL - 20
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 42
M1 - 425305
ER -