A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise; K. Mitsuishi; M. Shimojo; K. Furuya

doi:10.1088/0957-4484/20/42/425305

A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, M. Shimojo, K. Furuya

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A sensitive nanosized molybdenum oxide (MoO_x) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO_x had a conductivity ∼300Scm^-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm^-1 and MoO_x had photoconductivity. Nanosized MoO_x wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

Original language	English
Article number	425305
Journal	Nanotechnology
Volume	20
Issue number	42
DOIs	https://doi.org/10.1088/0957-4484/20/42/425305
Publication status	Published - 2009 Oct 12
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/20/42/425305

Fingerprint Dive into the research topics of 'A nanosized photodetector fabricated by electron-beam-induced deposition'. Together they form a unique fingerprint.

Cite this

@article{23c51bb1c8354b18a1e97483627bd8e8,

title = "A nanosized photodetector fabricated by electron-beam-induced deposition",

abstract = "A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.",

author = "K. Makise and K. Mitsuishi and M. Shimojo and K. Furuya",

year = "2009",

month = oct,

day = "12",

doi = "10.1088/0957-4484/20/42/425305",

language = "English",

volume = "20",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "42",

}

TY - JOUR

T1 - A nanosized photodetector fabricated by electron-beam-induced deposition

AU - Makise, K.

AU - Mitsuishi, K.

AU - Shimojo, M.

AU - Furuya, K.

PY - 2009/10/12

Y1 - 2009/10/12

N2 - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

AB - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

UR - http://www.scopus.com/inward/record.url?scp=70349706097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349706097&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/20/42/425305

DO - 10.1088/0957-4484/20/42/425305

M3 - Article

C2 - 19779232

AN - SCOPUS:70349706097

VL - 20

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 42

M1 - 425305

ER -