A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise; K. Mitsuishi; M. Shimojo; K. Furuya

doi:10.1088/0957-4484/20/42/425305

A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, M. Shimojo, K. Furuya

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

A sensitive nanosized molybdenum oxide (MoO_x) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO_x had a conductivity ∼300Scm^-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm^-1 and MoO_x had photoconductivity. Nanosized MoO_x wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

Original language	English
Article number	425305
Journal	Nanotechnology
Volume	20
Issue number	42
DOIs	https://doi.org/10.1088/0957-4484/20/42/425305
Publication status	Published - 2009 Oct 12

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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Makise, K., Mitsuishi, K., Shimojo, M., & Furuya, K. (2009). A nanosized photodetector fabricated by electron-beam-induced deposition. Nanotechnology, 20(42), [425305]. https://doi.org/10.1088/0957-4484/20/42/425305

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