A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, Masayuki Shimojo, K. Furuya

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

Original languageEnglish
Article number425305
JournalNanotechnology
Volume20
Issue number42
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

Molybdenum oxide
Photodetectors
Electron beams
Photoconductivity
Optical devices
Nanowires
Wire
Annealing

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

A nanosized photodetector fabricated by electron-beam-induced deposition. / Makise, K.; Mitsuishi, K.; Shimojo, Masayuki; Furuya, K.

In: Nanotechnology, Vol. 20, No. 42, 425305, 2009.

Research output: Contribution to journalArticle

Makise, K. ; Mitsuishi, K. ; Shimojo, Masayuki ; Furuya, K. / A nanosized photodetector fabricated by electron-beam-induced deposition. In: Nanotechnology. 2009 ; Vol. 20, No. 42.
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