A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, M. Shimojo, K. Furuya

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

Original languageEnglish
Article number425305
JournalNanotechnology
Volume20
Issue number42
DOIs
Publication statusPublished - 2009 Oct 12
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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