A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise; K. Mitsuishi; Masayuki Shimojo; K. Furuya

doi:10.1088/0957-4484/20/42/425305

A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, Masayuki Shimojo, K. Furuya

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

A sensitive nanosized molybdenum oxide (MoO_x) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO_x had a conductivity ∼300Scm^-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm^-1 and MoO_x had photoconductivity. Nanosized MoO_x wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

Original language	English
Article number	425305
Journal	Nanotechnology
Volume	20
Issue number	42
DOIs	https://doi.org/10.1088/0957-4484/20/42/425305
Publication status	Published - 2009
Externally published	Yes

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ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Electrical and Electronic Engineering
Mechanical Engineering
Mechanics of Materials
Materials Science(all)

Cite this

Makise, K., Mitsuishi, K., Shimojo, M., & Furuya, K. (2009). A nanosized photodetector fabricated by electron-beam-induced deposition. Nanotechnology, 20(42), [425305]. https://doi.org/10.1088/0957-4484/20/42/425305

@article{23c51bb1c8354b18a1e97483627bd8e8,

title = "A nanosized photodetector fabricated by electron-beam-induced deposition",

abstract = "A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.",

author = "K. Makise and K. Mitsuishi and Masayuki Shimojo and K. Furuya",

year = "2009",

doi = "10.1088/0957-4484/20/42/425305",

language = "English",

volume = "20",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "42",

}

TY - JOUR

T1 - A nanosized photodetector fabricated by electron-beam-induced deposition

AU - Makise, K.

AU - Mitsuishi, K.

AU - Shimojo, Masayuki

AU - Furuya, K.

PY - 2009

Y1 - 2009

N2 - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

AB - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

UR - http://www.scopus.com/inward/record.url?scp=70349706097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349706097&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/20/42/425305

DO - 10.1088/0957-4484/20/42/425305

M3 - Article

C2 - 19779232

AN - SCOPUS:70349706097

VL - 20

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 42

M1 - 425305

ER -

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10.1088/0957-4484/20/42/425305