A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement

K. Kita, M. Sasagawa, K. Kyuno, A. Torium

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)166-170
Journal2003 Int. Conference on Characterization and Metrology for ULSI Technology; AIP Conf. Proceedings 550
Publication statusPublished - 2003 Mar 1

Cite this

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title = "A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement",
author = "K. Kita and M. Sasagawa and K. Kyuno and A. Torium",
year = "2003",
month = "3",
day = "1",
language = "English",
pages = "166--170",
journal = "2003 Int. Conference on Characterization and Metrology for ULSI Technology; AIP Conf. Proceedings 550",

}

TY - JOUR

T1 - A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement

AU - Kita, K.

AU - Sasagawa, M.

AU - Kyuno, K.

AU - Torium, A.

PY - 2003/3/1

Y1 - 2003/3/1

M3 - Article

SP - 166

EP - 170

JO - 2003 Int. Conference on Characterization and Metrology for ULSI Technology; AIP Conf. Proceedings 550

JF - 2003 Int. Conference on Characterization and Metrology for ULSI Technology; AIP Conf. Proceedings 550

ER -