A New Interlayer Dielectric Film Formation Technology Using Room Temperature Flow CVD

T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)71-75
JournalProceedings of 10th VLSI Multilevel Interconnection Conference
Publication statusPublished - 1993 Jun 8

Cite this

A New Interlayer Dielectric Film Formation Technology Using Room Temperature Flow CVD. / T.Homma, T.Homma; Y.Murao, Y.Murao; Homma, Tetsuya.

In: Proceedings of 10th VLSI Multilevel Interconnection Conference, 08.06.1993, p. 71-75.

Research output: Contribution to journalArticle

@article{32e42b3300d240fda8a9788bea74b22c,
title = "A New Interlayer Dielectric Film Formation Technology Using Room Temperature Flow CVD",
author = "T.Homma T.Homma and Y.Murao Y.Murao and Tetsuya Homma",
year = "1993",
month = "6",
day = "8",
language = "English",
pages = "71--75",
journal = "Proceedings of 10th VLSI Multilevel Interconnection Conference",

}

TY - JOUR

T1 - A New Interlayer Dielectric Film Formation Technology Using Room Temperature Flow CVD

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/6/8

Y1 - 1993/6/8

M3 - Article

SP - 71

EP - 75

JO - Proceedings of 10th VLSI Multilevel Interconnection Conference

JF - Proceedings of 10th VLSI Multilevel Interconnection Conference

ER -