A new interlayer formation technology for completely planarized multilevel interconnection by using LPD

Tetsuya Homma, T. Katoh, Y. Yamada, J. Shimizu, Y. Murao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A description is given of a newly developed selective interlayer dielectrics formation technology to realize completely planarized multilevel interconnections. The technology uses liquid phase deposition (LPD) at extremely low temperature (approximately 40°C). This technology has the capability to realize high density VLSIs such as logic devices beyond 100-kgate and memory devices beyond 16-Mb because of the low thermal stress and the excellent planarization characteristics. This technology eliminates key hole formation in spacings among wirings. Selective deposition is possible by LPD. Compared with conventional CVD films, the LPD-SiO 2 film has excellent properties for interlayer dielectrics. A completely planarized two-level interconnection using the LPD technology is discussed.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherPubl by IEEE
Pages3-4
Number of pages2
Publication statusPublished - 1990
Externally publishedYes
Event1990 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1990 Jun 41990 Jun 7

Other

Other1990 Symposium on VLSI Technology
CityHonolulu, HI, USA
Period90/6/490/6/7

Fingerprint

Liquids
Logic devices
Electric wiring
Thermal stress
Chemical vapor deposition
Data storage equipment
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Homma, T., Katoh, T., Yamada, Y., Shimizu, J., & Murao, Y. (1990). A new interlayer formation technology for completely planarized multilevel interconnection by using LPD. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 3-4). Publ by IEEE.

A new interlayer formation technology for completely planarized multilevel interconnection by using LPD. / Homma, Tetsuya; Katoh, T.; Yamada, Y.; Shimizu, J.; Murao, Y.

Digest of Technical Papers - Symposium on VLSI Technology. Publ by IEEE, 1990. p. 3-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Homma, T, Katoh, T, Yamada, Y, Shimizu, J & Murao, Y 1990, A new interlayer formation technology for completely planarized multilevel interconnection by using LPD. in Digest of Technical Papers - Symposium on VLSI Technology. Publ by IEEE, pp. 3-4, 1990 Symposium on VLSI Technology, Honolulu, HI, USA, 90/6/4.
Homma T, Katoh T, Yamada Y, Shimizu J, Murao Y. A new interlayer formation technology for completely planarized multilevel interconnection by using LPD. In Digest of Technical Papers - Symposium on VLSI Technology. Publ by IEEE. 1990. p. 3-4
Homma, Tetsuya ; Katoh, T. ; Yamada, Y. ; Shimizu, J. ; Murao, Y. / A new interlayer formation technology for completely planarized multilevel interconnection by using LPD. Digest of Technical Papers - Symposium on VLSI Technology. Publ by IEEE, 1990. pp. 3-4
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