A new interlayer formation technology for completely planarized multilevel interconnection by using LPD

T. Homma, T. Katoh, Y. Yamada, J. Shimizu, Y. Murao

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

A description is given of a newly developed selective interlayer dielectrics formation technology to realize completely planarized multilevel interconnections. The technology uses liquid phase deposition (LPD) at extremely low temperature (∼40°C). This technology has the capability to realize high density VLSIs such as logic devices beyond 100-kgate and memory devices beyond 16-Mb because of the low thermal stress and the excellent planarization characteristics. This technology eliminates key hole formation in spacings among wirings. Selective deposition is possible by LPD. Compared with conventional CVD films, the LPD-SiO2 film has excellent properties for interlayer dielectrics. A completely planarized two-level interconnection using the LPD technology is discussed.

Original languageEnglish
Article number5727439
Pages (from-to)3-4
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes
Event1990 Symposium on VLSI Technology - Honolulu, HI, United States
Duration: 1990 Jun 41990 Jun 7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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