Abstract
A description is given of a newly developed selective interlayer dielectrics formation technology to realize completely planarized multilevel interconnections. The technology uses liquid phase deposition (LPD) at extremely low temperature (approximately 40°C). This technology has the capability to realize high density VLSIs such as logic devices beyond 100-kgate and memory devices beyond 16-Mb because of the low thermal stress and the excellent planarization characteristics. This technology eliminates key hole formation in spacings among wirings. Selective deposition is possible by LPD. Compared with conventional CVD films, the LPD-SiO 2 film has excellent properties for interlayer dielectrics. A completely planarized two-level interconnection using the LPD technology is discussed.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - Symposium on VLSI Technology |
| Publisher | Publ by IEEE |
| Pages | 3-4 |
| Number of pages | 2 |
| Publication status | Published - 1990 |
| Externally published | Yes |
| Event | 1990 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1990 Jun 4 → 1990 Jun 7 |
Other
| Other | 1990 Symposium on VLSI Technology |
|---|---|
| City | Honolulu, HI, USA |
| Period | 90/6/4 → 90/6/7 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
A new interlayer formation technology for completely planarized multilevel interconnection by using LPD. / Homma, Tetsuya; Katoh, T.; Yamada, Y.; Shimizu, J.; Murao, Y.
Digest of Technical Papers - Symposium on VLSI Technology. Publ by IEEE, 1990. p. 3-4.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A new interlayer formation technology for completely planarized multilevel interconnection by using LPD
AU - Homma, Tetsuya
AU - Katoh, T.
AU - Yamada, Y.
AU - Shimizu, J.
AU - Murao, Y.
PY - 1990
Y1 - 1990
N2 - A description is given of a newly developed selective interlayer dielectrics formation technology to realize completely planarized multilevel interconnections. The technology uses liquid phase deposition (LPD) at extremely low temperature (approximately 40°C). This technology has the capability to realize high density VLSIs such as logic devices beyond 100-kgate and memory devices beyond 16-Mb because of the low thermal stress and the excellent planarization characteristics. This technology eliminates key hole formation in spacings among wirings. Selective deposition is possible by LPD. Compared with conventional CVD films, the LPD-SiO 2 film has excellent properties for interlayer dielectrics. A completely planarized two-level interconnection using the LPD technology is discussed.
AB - A description is given of a newly developed selective interlayer dielectrics formation technology to realize completely planarized multilevel interconnections. The technology uses liquid phase deposition (LPD) at extremely low temperature (approximately 40°C). This technology has the capability to realize high density VLSIs such as logic devices beyond 100-kgate and memory devices beyond 16-Mb because of the low thermal stress and the excellent planarization characteristics. This technology eliminates key hole formation in spacings among wirings. Selective deposition is possible by LPD. Compared with conventional CVD films, the LPD-SiO 2 film has excellent properties for interlayer dielectrics. A completely planarized two-level interconnection using the LPD technology is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0025627399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025627399&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0025627399
SP - 3
EP - 4
BT - Digest of Technical Papers - Symposium on VLSI Technology
PB - Publ by IEEE
ER -