A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two-Dimensional Hole Gas

Kunishige Oe, Makoto Hirano, Fumihiko Yanagawa

    Research output: Contribution to journalArticle

    15 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)L335-L337
    JournalJapan Journal of Applied Physics
    Volume24
    Publication statusPublished - 1985 May 1

    Cite this

    A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two-Dimensional Hole Gas. / Oe, Kunishige; Hirano, Makoto; Yanagawa, Fumihiko.

    In: Japan Journal of Applied Physics, Vol. 24, 01.05.1985, p. L335-L337.

    Research output: Contribution to journalArticle

    Oe, Kunishige ; Hirano, Makoto ; Yanagawa, Fumihiko. / A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two-Dimensional Hole Gas. In: Japan Journal of Applied Physics. 1985 ; Vol. 24. pp. L335-L337.
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    AU - Hirano, Makoto

    AU - Yanagawa, Fumihiko

    PY - 1985/5/1

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