A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)

T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)65-71
JournalProceedings of 9th VLSI Multilevel Interconnection Conference
Publication statusPublished - 1992 Jun 9

Cite this

A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST). / T.Homma, T.Homma; Y.Murao, Y.Murao; Homma, Tetsuya.

In: Proceedings of 9th VLSI Multilevel Interconnection Conference, 09.06.1992, p. 65-71.

Research output: Contribution to journalArticle

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