A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)

T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	65-71
Journal	Proceedings of 9th VLSI Multilevel Interconnection Conference
Publication status	Published - 1992 Jun 9

Cite this

@article{ad2c96188cf34e199528de73903ce05f,

title = "A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)",

author = "T.Homma T.Homma and Y.Murao Y.Murao and Tetsuya Homma",

year = "1992",

month = jun,

day = "9",

language = "English",

pages = "65--71",

journal = "Proceedings of 9th VLSI Multilevel Interconnection Conference",

}

TY - JOUR

T1 - A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1992/6/9

Y1 - 1992/6/9

M3 - Article

SP - 65

EP - 71

JO - Proceedings of 9th VLSI Multilevel Interconnection Conference

JF - Proceedings of 9th VLSI Multilevel Interconnection Conference

ER -