A new two step metal CMP technique for a high performance multilevel interconnects featured by Al-and Cu in low - , organic film metallization

Y.Hayashi Y.Hayashi, T.Onodera T.Onodera, T.Nakajima T.Nakajima, K.Kikuta K.Kikuta, Y.Tsuchiya Y.Tsuchiya, J.Kawahara J.Kawahara, S.Takahashi S.Takahashi, K.Ueno K.Ueno, S.Chikaki S.Chikaki, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)88-89
Journal1996 Symposium on VLSI Technology Digest of Technical Papers
Publication statusPublished - 1997 Jun 1

Cite this

Y.Hayashi, Y. H., T.Onodera, T. O., T.Nakajima, T. N., K.Kikuta, K. K., Y.Tsuchiya, Y. T., J.Kawahara, J. K., S.Takahashi, S. T., K.Ueno, K. U., S.Chikaki, S. C., & Ueno, K. (1997). A new two step metal CMP technique for a high performance multilevel interconnects featured by Al-and Cu in low - , organic film metallization. 1996 Symposium on VLSI Technology Digest of Technical Papers, 88-89.