A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure

N. Kawahara; M. Tagami; B. Withers; Y. Kakuhura; H. Imura; K. Ohto; T. Taiji; K. Arita; T. Kurokawa; M. Nagase; T. Maruyama; N. Oda; Y. Hayashi; J. Jacobs; M. Sakurai; M. Sekine; K. Ueno

doi:10.1109/IITC.2006.1648674

A novel CoWP cap integration for porous low-k/Cu interconnects with NH ₃ plasma treatment and low-k top (LKT) dielectric structure

N. Kawahara, M. Tagami, B. Withers, Y. Kakuhura, H. Imura, K. Ohto, T. Taiji, K. Arita, T. Kurokawa, M. Nagase, T. Maruyama, N. Oda, Y. Hayashi, J. Jacobs, M. Sakurai, M. Sekine, K. Ueno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH₂ plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH₃ plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.

Original language	English
Title of host publication	2006 International Interconnect Technology Conference, IITC
Pages	152-154
Number of pages	3
DOIs	https://doi.org/10.1109/IITC.2006.1648674
Publication status	Published - 2006
Externally published	Yes
Event	2006 International Interconnect Technology Conference, IITC - Burlingame, CA, United States Duration: 2006 Jun 5 → 2006 Jun 7

Publication series

Name	2006 International Interconnect Technology Conference, IITC

Conference

Conference	2006 International Interconnect Technology Conference, IITC
Country/Territory	United States
City	Burlingame, CA
Period	06/6/5 → 06/6/7

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/IITC.2006.1648674

Cite this

Kawahara, N., Tagami, M., Withers, B., Kakuhura, Y., Imura, H., Ohto, K., Taiji, T., Arita, K., Kurokawa, T., Nagase, M., Maruyama, T., Oda, N., Hayashi, Y., Jacobs, J., Sakurai, M., Sekine, M., & Ueno, K. (2006). A novel CoWP cap integration for porous low-k/Cu interconnects with NH ₃ plasma treatment and low-k top (LKT) dielectric structure. In 2006 International Interconnect Technology Conference, IITC (pp. 152-154). [1648674] (2006 International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2006.1648674

A novel CoWP cap integration for porous low-k/Cu interconnects with NH ₃ plasma treatment and low-k top (LKT) dielectric structure. / Kawahara, N.; Tagami, M.; Withers, B. et al.

2006 International Interconnect Technology Conference, IITC. 2006. p. 152-154 1648674 (2006 International Interconnect Technology Conference, IITC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawahara, N, Tagami, M, Withers, B, Kakuhura, Y, Imura, H, Ohto, K, Taiji, T, Arita, K, Kurokawa, T, Nagase, M, Maruyama, T, Oda, N, Hayashi, Y, Jacobs, J, Sakurai, M, Sekine, M & Ueno, K 2006, A novel CoWP cap integration for porous low-k/Cu interconnects with NH ₃ plasma treatment and low-k top (LKT) dielectric structure. in 2006 International Interconnect Technology Conference, IITC., 1648674, 2006 International Interconnect Technology Conference, IITC, pp. 152-154, 2006 International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 06/6/5. https://doi.org/10.1109/IITC.2006.1648674

Kawahara N, Tagami M, Withers B, Kakuhura Y, Imura H, Ohto K et al. A novel CoWP cap integration for porous low-k/Cu interconnects with NH ₃ plasma treatment and low-k top (LKT) dielectric structure. In 2006 International Interconnect Technology Conference, IITC. 2006. p. 152-154. 1648674. (2006 International Interconnect Technology Conference, IITC). doi: 10.1109/IITC.2006.1648674

@inproceedings{5042efd17c5148f2955703ab11823f93,

title = "A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure",

abstract = "A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.",

author = "N. Kawahara and M. Tagami and B. Withers and Y. Kakuhura and H. Imura and K. Ohto and T. Taiji and K. Arita and T. Kurokawa and M. Nagase and T. Maruyama and N. Oda and Y. Hayashi and J. Jacobs and M. Sakurai and M. Sekine and K. Ueno",

year = "2006",

doi = "10.1109/IITC.2006.1648674",

language = "English",

isbn = "1424401038",

series = "2006 International Interconnect Technology Conference, IITC",

pages = "152--154",

booktitle = "2006 International Interconnect Technology Conference, IITC",

note = "2006 International Interconnect Technology Conference, IITC ; Conference date: 05-06-2006 Through 07-06-2006",

}

TY - GEN

T1 - A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure

AU - Kawahara, N.

AU - Tagami, M.

AU - Withers, B.

AU - Kakuhura, Y.

AU - Imura, H.

AU - Ohto, K.

AU - Taiji, T.

AU - Arita, K.

AU - Kurokawa, T.

AU - Nagase, M.

AU - Maruyama, T.

AU - Oda, N.

AU - Hayashi, Y.

AU - Jacobs, J.

AU - Sakurai, M.

AU - Sekine, M.

AU - Ueno, K.

PY - 2006

Y1 - 2006

N2 - A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.

AB - A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.

UR - http://www.scopus.com/inward/record.url?scp=50249131457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249131457&partnerID=8YFLogxK

U2 - 10.1109/IITC.2006.1648674

DO - 10.1109/IITC.2006.1648674

M3 - Conference contribution

AN - SCOPUS:50249131457

SN - 1424401038

SN - 9781424401031

T3 - 2006 International Interconnect Technology Conference, IITC

SP - 152

EP - 154

BT - 2006 International Interconnect Technology Conference, IITC

T2 - 2006 International Interconnect Technology Conference, IITC

Y2 - 5 June 2006 through 7 June 2006

ER -