A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure

N. Kawahara, M. Tagami, B. Withers, Y. Kakuhura, H. Imura, K. Ohto, T. Taiji, K. Arita, T. Kurokawa, M. Nagase, T. Maruyama, N. Oda, Y. Hayashi, J. Jacobs, M. Sakurai, M. Sekine, K. Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.

Original languageEnglish
Title of host publication2006 International Interconnect Technology Conference, IITC
Pages152-154
Number of pages3
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Interconnect Technology Conference, IITC - Burlingame, CA
Duration: 2006 Jun 52006 Jun 7

Other

Other2006 International Interconnect Technology Conference, IITC
CityBurlingame, CA
Period06/6/506/6/7

Fingerprint

Leakage currents
Electric breakdown
Plasmas

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Kawahara, N., Tagami, M., Withers, B., Kakuhura, Y., Imura, H., Ohto, K., ... Ueno, K. (2006). A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure. In 2006 International Interconnect Technology Conference, IITC (pp. 152-154). [1648674] https://doi.org/10.1109/IITC.2006.1648674

A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure. / Kawahara, N.; Tagami, M.; Withers, B.; Kakuhura, Y.; Imura, H.; Ohto, K.; Taiji, T.; Arita, K.; Kurokawa, T.; Nagase, M.; Maruyama, T.; Oda, N.; Hayashi, Y.; Jacobs, J.; Sakurai, M.; Sekine, M.; Ueno, K.

2006 International Interconnect Technology Conference, IITC. 2006. p. 152-154 1648674.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kawahara, N, Tagami, M, Withers, B, Kakuhura, Y, Imura, H, Ohto, K, Taiji, T, Arita, K, Kurokawa, T, Nagase, M, Maruyama, T, Oda, N, Hayashi, Y, Jacobs, J, Sakurai, M, Sekine, M & Ueno, K 2006, A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure. in 2006 International Interconnect Technology Conference, IITC., 1648674, pp. 152-154, 2006 International Interconnect Technology Conference, IITC, Burlingame, CA, 06/6/5. https://doi.org/10.1109/IITC.2006.1648674
Kawahara N, Tagami M, Withers B, Kakuhura Y, Imura H, Ohto K et al. A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure. In 2006 International Interconnect Technology Conference, IITC. 2006. p. 152-154. 1648674 https://doi.org/10.1109/IITC.2006.1648674
Kawahara, N. ; Tagami, M. ; Withers, B. ; Kakuhura, Y. ; Imura, H. ; Ohto, K. ; Taiji, T. ; Arita, K. ; Kurokawa, T. ; Nagase, M. ; Maruyama, T. ; Oda, N. ; Hayashi, Y. ; Jacobs, J. ; Sakurai, M. ; Sekine, M. ; Ueno, K. / A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure. 2006 International Interconnect Technology Conference, IITC. 2006. pp. 152-154
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abstract = "A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10{\%} lower RC product is obtained by the LKT structure with CoWP cap.",
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AU - Imura, H.

AU - Ohto, K.

AU - Taiji, T.

AU - Arita, K.

AU - Kurokawa, T.

AU - Nagase, M.

AU - Maruyama, T.

AU - Oda, N.

AU - Hayashi, Y.

AU - Jacobs, J.

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