Abstract
Temperature change was simulated using a solid body rotating melt model when solid polycrystalline silicon granules were supplied to a melt in a double-crucible method. Only heat conduction was considered in the analysis. The influence of the crucible rotation rates and of the initial temperature of the supplied silicon was investigated systematically and quantitatively. The influence of the crucible rotation rate was stronger than expected, which suggests that the crucible rotation rate cannot be lowered too much because of the possibility of the melt solidifying between the inner and outer crucibles.
Original language | English |
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Pages (from-to) | 297-304 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 132 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1993 Sep 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry