A numerical study on oxygen transport in silicon melt in a double-crucible method

Naoki Ono, Michio Kida, Yoshiaki Arai, Kensho Sahira

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.

Original languageEnglish
Pages (from-to)427-434
Number of pages8
JournalJournal of Crystal Growth
Volume137
Issue number3-4
DOIs
Publication statusPublished - 1994 Apr 1
Externally publishedYes

Fingerprint

Crucibles
Silicon
crucibles
Oxygen
silicon
oxygen
vortices
turbulent flow
Turbulent flow
diffusivity
Viscosity
viscosity
Crystals
crystals
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

A numerical study on oxygen transport in silicon melt in a double-crucible method. / Ono, Naoki; Kida, Michio; Arai, Yoshiaki; Sahira, Kensho.

In: Journal of Crystal Growth, Vol. 137, No. 3-4, 01.04.1994, p. 427-434.

Research output: Contribution to journalArticle

Ono, Naoki ; Kida, Michio ; Arai, Yoshiaki ; Sahira, Kensho. / A numerical study on oxygen transport in silicon melt in a double-crucible method. In: Journal of Crystal Growth. 1994 ; Vol. 137, No. 3-4. pp. 427-434.
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