A Numerical Study on the Macroscopic Kinetics of the Ring-OSF in the Silicon CZ Growth by the Model Using Self-Interstitials as the Dominant Diffusers.

Naoki Ono; Kazuhiro Harada; Jun Furukawa; Kazuya Suzuki; Michio Kida; Yasushi Shimanuki

A Numerical Study on the Macroscopic Kinetics of the Ring-OSF in the Silicon CZ Growth by the Model Using Self-Interstitials as the Dominant Diffusers.

Naoki Ono, Kazuhiro Harada, Jun Furukawa, Kazuya Suzuki, Michio Kida, Yasushi Shimanuki

Regional Environment Systems

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	503-514
Journal	Electrochemical Society "Semiconductor Silicon 1998" meeting proceeding
Volume	1998-1
Publication status	Published - 1998 May 1

Cite this

Ono, N., Harada, K., Furukawa, J., Suzuki, K., Kida, M., & Shimanuki, Y. (1998). A Numerical Study on the Macroscopic Kinetics of the Ring-OSF in the Silicon CZ Growth by the Model Using Self-Interstitials as the Dominant Diffusers. Electrochemical Society "Semiconductor Silicon 1998" meeting proceeding, 1998-1, 503-514.

A Numerical Study on the Macroscopic Kinetics of the Ring-OSF in the Silicon CZ Growth by the Model Using Self-Interstitials as the Dominant Diffusers. / Ono, Naoki; Harada, Kazuhiro; Furukawa, Jun; Suzuki, Kazuya; Kida, Michio; Shimanuki, Yasushi.

In: Electrochemical Society "Semiconductor Silicon 1998" meeting proceeding, Vol. 1998-1, 01.05.1998, p. 503-514.

Research output: Contribution to journal › Article

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