A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

K. Oe, M. Hirano, K. Arai, F. Yanagawa, K. Tsubaki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

Original languageEnglish
Pages (from-to)378-381
Number of pages4
JournalSurface Science
Volume174
Issue number1-3
DOIs
Publication statusPublished - 1986 Aug 3
Externally publishedYes

Fingerprint

logic circuits
Logic circuits
Management information systems
Transconductance
MIS (semiconductors)
transconductance
Field effect transistors
aluminum gallium arsenides
Heterojunctions
Transistors
transistors
field effect transistors
Gases
oscillations
gases
gallium arsenide

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas. / Oe, K.; Hirano, M.; Arai, K.; Yanagawa, F.; Tsubaki, K.

In: Surface Science, Vol. 174, No. 1-3, 03.08.1986, p. 378-381.

Research output: Contribution to journalArticle

Oe, K. ; Hirano, M. ; Arai, K. ; Yanagawa, F. ; Tsubaki, K. / A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas. In: Surface Science. 1986 ; Vol. 174, No. 1-3. pp. 378-381.
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