A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

K. Oe, M. Hirano, K. Arai, F. Yanagawa, K. Tsubaki

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

    Original languageEnglish
    Pages (from-to)378-381
    Number of pages4
    JournalSurface Science
    Volume174
    Issue number1-3
    DOIs
    Publication statusPublished - 1986 Aug 3

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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