A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching

M.Saito M.Saito, I.Touno I.Touno, K.Omiya K.Omiya, T.Homma T.Homma, T.Nagatomo T.Nagatomo, Tetsuya Homma

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)G451-G454
JournalJournal of the Electrochemical Society
Volume149
Publication statusPublished - 2002 Aug 1

Cite this

M.Saito, M. S., I.Touno, I. T., K.Omiya, K. O., T.Homma, T. H., T.Nagatomo, T. N., & Homma, T. (2002). A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching. Journal of the Electrochemical Society, 149, G451-G454.

A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching. / M.Saito, M.Saito; I.Touno, I.Touno; K.Omiya, K.Omiya; T.Homma, T.Homma; T.Nagatomo, T.Nagatomo; Homma, Tetsuya.

In: Journal of the Electrochemical Society, Vol. 149, 01.08.2002, p. G451-G454.

Research output: Contribution to journalArticle

M.Saito, MS, I.Touno, IT, K.Omiya, KO, T.Homma, TH, T.Nagatomo, TN & Homma, T 2002, 'A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching', Journal of the Electrochemical Society, vol. 149, pp. G451-G454.
M.Saito, M.Saito ; I.Touno, I.Touno ; K.Omiya, K.Omiya ; T.Homma, T.Homma ; T.Nagatomo, T.Nagatomo ; Homma, Tetsuya. / A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching. In: Journal of the Electrochemical Society. 2002 ; Vol. 149. pp. G451-G454.
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