A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen

Makoto Saito, Ichiro Touno, Kayoko Omiya, Tetsuya Homma, Takao Nagatomo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A photoresist removal process with plasma treatment after aluminum film etching was developed. During a previous reactive ion etching step, reaction products are deposited on the sidewalls of the patterns etched in the Al film and the photoresist on top of it. The deposited material is analyzed by X-ray photoelectron spectroscopy and found to consist of chlorides of Al. It is demonstrated than the deposited film can be removed by treatment in inductively coupled plasma using hydrogen-containing gas (methyl alcohol in the present study) with a radio frequency bias applied to the substrate. The optical spectra indicate that the reactive species are hydrogen and other reactive species (e.g., CH and OH) generated by dissociation of methyl alcohol.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number8
DOIs
Publication statusPublished - 2002 Aug

Fingerprint

Plasma etching
plasma etching
Photoresists
Aluminum
photoresists
Hydrogen
Gases
aluminum
Methanol
hydrogen
methyl alcohol
gases
etching
Reactive ion etching
Inductively coupled plasma
hydrogen plasma
Reaction products
reaction products
optical spectrum
Chlorides

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen. / Saito, Makoto; Touno, Ichiro; Omiya, Kayoko; Homma, Tetsuya; Nagatomo, Takao.

In: Journal of the Electrochemical Society, Vol. 149, No. 8, 08.2002.

Research output: Contribution to journalArticle

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