A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Yijun Sun; Takashi Egawa; Hiroyasu Ishikawa

doi:10.1063/1.1776638

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Yijun Sun, Takashi Egawa, Hiroyasu Ishikawa

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5 Citations (Scopus)

Abstract

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

Original language	English
Pages (from-to)	2586-2591
Number of pages	6
Journal	Journal of Applied Physics
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.1776638
Publication status	Published - 2004 Sep 1

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Sun, Y., Egawa, T., & Ishikawa, H. (2004). A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells. Journal of Applied Physics, 96(5), 2586-2591. https://doi.org/10.1063/1.1776638

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abstract = "The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.",

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AB - The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

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10.1063/1.1776638