Abstract
The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.
| Original language | English |
|---|---|
| Pages (from-to) | 2586-2591 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 Sep 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Sun, Y., Egawa, T., & Ishikawa, H. (2004). A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells. Journal of Applied Physics, 96(5), 2586-2591. https://doi.org/10.1063/1.1776638