A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Yijun Sun, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

Original languageEnglish
Pages (from-to)2586-2591
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
Publication statusPublished - 2004 Sep 1
Externally publishedYes

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quantum wells
photoluminescence
annealing
radiative recombination
optical properties
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells. / Sun, Yijun; Egawa, Takashi; Ishikawa, Hiroyasu.

In: Journal of Applied Physics, Vol. 96, No. 5, 01.09.2004, p. 2586-2591.

Research output: Contribution to journalArticle

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