A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Yijun Sun; Takashi Egawa; Hiroyasu Ishikawa

doi:10.1063/1.1776638

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Yijun Sun, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

Original language	English
Pages (from-to)	2586-2591
Number of pages	6
Journal	Journal of Applied Physics
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.1776638
Publication status	Published - 2004 Sep 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1776638

Fingerprint Dive into the research topics of 'A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells'. Together they form a unique fingerprint.

Cite this

@article{423e38d397d94f05a28e40fc433b3876,

title = "A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells",

abstract = "The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.",

author = "Yijun Sun and Takashi Egawa and Hiroyasu Ishikawa",

year = "2004",

month = sep,

day = "1",

doi = "10.1063/1.1776638",

language = "English",

volume = "96",

pages = "2586--2591",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

AU - Sun, Yijun

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

PY - 2004/9/1

Y1 - 2004/9/1

N2 - The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

AB - The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=4944263327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944263327&partnerID=8YFLogxK

U2 - 10.1063/1.1776638

DO - 10.1063/1.1776638

M3 - Article

AN - SCOPUS:4944263327

VL - 96

SP - 2586

EP - 2591

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -