A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama; Y.Yamada Y.Yamada; K.Kishimoto K.Kishimoto; T.Usami T.Usami; H.Kawamoto H.Kawamoto; H.Gomi H.Gomi; K.Ueno K.Ueno; Kazuyoshi Ueno

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

Functional Control Systems

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	288-290
Journal	Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials
Publication status	Published - 1997 Sep 1

Cite this

T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H.Kawamoto, H. K., H.Gomi, H. G., K.Ueno, K. U., & Ueno, K. (1997). A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 288-290.

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. / T.Yokoyama, T.Yokoyama; Y.Yamada, Y.Yamada; K.Kishimoto, K.Kishimoto; T.Usami, T.Usami; H.Kawamoto, H.Kawamoto; H.Gomi, H.Gomi; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 01.09.1997, p. 288-290.

Research output: Contribution to journal › Article

T.Yokoyama, T.Yokoyama ; Y.Yamada, Y.Yamada ; K.Kishimoto, K.Kishimoto ; T.Usami, T.Usami ; H.Kawamoto, H.Kawamoto ; H.Gomi, H.Gomi ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials. 1997 ; pp. 288-290.

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