A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)288-290
JournalExtended Abstracts of 1997 International Conf. On Solid State Devices and Materials
Publication statusPublished - 1997 Sep 1

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A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. / T.Yokoyama, T.Yokoyama; Y.Yamada, Y.Yamada; K.Kishimoto, K.Kishimoto; T.Usami, T.Usami; H.Kawamoto, H.Kawamoto; H.Gomi, H.Gomi; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 01.09.1997, p. 288-290.

Research output: Contribution to journalArticle

T.Yokoyama, T.Yokoyama ; Y.Yamada, Y.Yamada ; K.Kishimoto, K.Kishimoto ; T.Usami, T.Usami ; H.Kawamoto, H.Kawamoto ; H.Gomi, H.Gomi ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials. 1997 ; pp. 288-290.
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AU - K.Kishimoto, K.Kishimoto

AU - T.Usami, T.Usami

AU - H.Kawamoto, H.Kawamoto

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AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

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JO - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials

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