A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)288-290
JournalExtended Abstracts of 1997 International Conf. On Solid State Devices and Materials
Publication statusPublished - 1997 Sept 1

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