Original language | English |
---|---|
Pages (from-to) | 288-290 |
Journal | Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials |
Publication status | Published - 1997 Sep 1 |
Cite this
A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. / T.Yokoyama, T.Yokoyama; Y.Yamada, Y.Yamada; K.Kishimoto, K.Kishimoto; T.Usami, T.Usami; H.Kawamoto, H.Kawamoto; H.Gomi, H.Gomi; K.Ueno, K.Ueno; Ueno, Kazuyoshi.
In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 01.09.1997, p. 288-290.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF
AU - T.Yokoyama, T.Yokoyama
AU - Y.Yamada, Y.Yamada
AU - K.Kishimoto, K.Kishimoto
AU - T.Usami, T.Usami
AU - H.Kawamoto, H.Kawamoto
AU - H.Gomi, H.Gomi
AU - K.Ueno, K.Ueno
AU - Ueno, Kazuyoshi
PY - 1997/9/1
Y1 - 1997/9/1
M3 - Article
SP - 288
EP - 290
JO - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials
JF - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials
ER -