Original language | English |
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Pages (from-to) | 288-290 |
Journal | Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials |
Publication status | Published - 1997 Sept 1 |
A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF
T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno
Research output: Contribution to journal › Article › peer-review