| Original language | English |
|---|---|
| Pages (from-to) | 288-290 |
| Journal | Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials |
| Publication status | Published - 1997 Sep 1 |
Cite this
T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H.Kawamoto, H. K., H.Gomi, H. G., ... Ueno, K. (1997). A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 288-290.