A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama; Y.Yamada Y.Yamada; K.Kishimoto K.Kishimoto; T.Usami T.Usami; H.Kawamoto H.Kawamoto; H.Gomi H.Gomi; K.Ueno K.Ueno; Kazuyoshi Ueno

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	288-290
Journal	Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials
Publication status	Published - 1997 Sept 1

Cite this

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. / T.Yokoyama, T.Yokoyama; Y.Yamada, Y.Yamada; K.Kishimoto, K.Kishimoto et al.

In: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 01.09.1997, p. 288-290.

Research output: Contribution to journal › Article › peer-review

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AU - T.Yokoyama, T.Yokoyama

AU - Y.Yamada, Y.Yamada

AU - K.Kishimoto, K.Kishimoto

AU - T.Usami, T.Usami

AU - H.Kawamoto, H.Kawamoto

AU - H.Gomi, H.Gomi

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

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EP - 290

JO - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials

JF - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials

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