A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation

N. Oda, S. Ito, T. Takewaki, K. Shiba, H. Kunishima, N. Hironaga, I. Honma, H. Nanba, S. Yokogawa, A. Kameyama, T. Goto, T. Usami, K. Ohto, A. Kubo, M. Suzuki, Y. Yamamoto, S. Watanabe, K. Yamada, M. Ikeda, K. Ueno;T. HoriuchiKazuyoshi Ueno

Research output: Contribution to journalArticle

9 Citations (Scopus)
Original languageEnglish
Pages (from-to)954-961
JournalJapanese Journal of Applied Physics
Volume46
Publication statusPublished - 2007 Mar 5

Cite this

Oda, N., Ito, S., Takewaki, T., Shiba, K., Kunishima, H., Hironaga, N., Honma, I., Nanba, H., Yokogawa, S., Kameyama, A., Goto, T., Usami, T., Ohto, K., Kubo, A., Suzuki, M., Yamamoto, Y., Watanabe, S., Yamada, K., Ikeda, M., ... Ueno, K. (2007). A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation. Japanese Journal of Applied Physics, 46, 954-961.