A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation

N. Oda, S. Ito, T. Takewaki, K. Shiba, H. Kunishima, N. Hironaga, I. Honma, H. Nanba, S. Yokogawa, A. Kameyama, T. Goto, T. Usami, K. Ohto, A. Kubo, M. Suzuki, Y. Yamamoto, S. Watanabe, K. Yamada, M. Ikeda, K. Ueno;T. HoriuchiKazuyoshi Ueno

Research output: Contribution to journalArticle

9 Citations (Scopus)
Original languageEnglish
Pages (from-to)954-961
JournalJapanese Journal of Applied Physics
Volume46
Publication statusPublished - 2007 Mar 5

Cite this

A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation. / Oda, N.; Ito, S.; Takewaki, T.; Shiba, K.; Kunishima, H.; Hironaga, N.; Honma, I.; Nanba, H.; Yokogawa, S.; Kameyama, A.; Goto, T.; Usami, T.; Ohto, K.; Kubo, A.; Suzuki, M.; Yamamoto, Y.; Watanabe, S.; Yamada, K.; Ikeda, M.; Horiuchi, K. Ueno;T.; Ueno, Kazuyoshi.

In: Japanese Journal of Applied Physics, Vol. 46, 05.03.2007, p. 954-961.

Research output: Contribution to journalArticle

Oda, N, Ito, S, Takewaki, T, Shiba, K, Kunishima, H, Hironaga, N, Honma, I, Nanba, H, Yokogawa, S, Kameyama, A, Goto, T, Usami, T, Ohto, K, Kubo, A, Suzuki, M, Yamamoto, Y, Watanabe, S, Yamada, K, Ikeda, M, Horiuchi, KUT & Ueno, K 2007, 'A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation', Japanese Journal of Applied Physics, vol. 46, pp. 954-961.
Oda, N. ; Ito, S. ; Takewaki, T. ; Shiba, K. ; Kunishima, H. ; Hironaga, N. ; Honma, I. ; Nanba, H. ; Yokogawa, S. ; Kameyama, A. ; Goto, T. ; Usami, T. ; Ohto, K. ; Kubo, A. ; Suzuki, M. ; Yamamoto, Y. ; Watanabe, S. ; Yamada, K. ; Ikeda, M. ; Horiuchi, K. Ueno;T. ; Ueno, Kazuyoshi. / A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation. In: Japanese Journal of Applied Physics. 2007 ; Vol. 46. pp. 954-961.
@article{abd48feb2a6d4b1fb3aa2a7b75b249b2,
title = "A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation",
author = "N. Oda and S. Ito and T. Takewaki and K. Shiba and H. Kunishima and N. Hironaga and I. Honma and H. Nanba and S. Yokogawa and A. Kameyama and T. Goto and T. Usami and K. Ohto and A. Kubo and M. Suzuki and Y. Yamamoto and S. Watanabe and K. Yamada and M. Ikeda and Horiuchi, {K. Ueno;T.} and Kazuyoshi Ueno",
year = "2007",
month = "3",
day = "5",
language = "English",
volume = "46",
pages = "954--961",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13um complementary metal oxide semiconductor generation

AU - Oda, N.

AU - Ito, S.

AU - Takewaki, T.

AU - Shiba, K.

AU - Kunishima, H.

AU - Hironaga, N.

AU - Honma, I.

AU - Nanba, H.

AU - Yokogawa, S.

AU - Kameyama, A.

AU - Goto, T.

AU - Usami, T.

AU - Ohto, K.

AU - Kubo, A.

AU - Suzuki, M.

AU - Yamamoto, Y.

AU - Watanabe, S.

AU - Yamada, K.

AU - Ikeda, M.

AU - Horiuchi, K. Ueno;T.

AU - Ueno, Kazuyoshi

PY - 2007/3/5

Y1 - 2007/3/5

M3 - Article

VL - 46

SP - 954

EP - 961

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

ER -