A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection

T.Homma T.Homma, R.Yamaguchi R.Yamaguchi, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	687-692
Journal	Journal of the Electrochemical Society
Volume	140
Publication status	Published - 1993 Mar 1

Cite this

@article{dcca1d11e6014c8a8e3c92ff602a56bf,

title = "A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection",

author = "T.Homma T.Homma and R.Yamaguchi R.Yamaguchi and Y.Murao Y.Murao and Tetsuya Homma",

year = "1993",

month = mar,

day = "1",

language = "English",

volume = "140",

pages = "687--692",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection

AU - T.Homma, T.Homma

AU - R.Yamaguchi, R.Yamaguchi

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/3/1

Y1 - 1993/3/1

M3 - Article

VL - 140

SP - 687

EP - 692

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

ER -