| Original language | English |
|---|---|
| Pages (from-to) | 687-692 |
| Journal | Journal of the Electrochemical Society |
| Volume | 140 |
| Publication status | Published - 1993 Mar 1 |
Cite this
T.Homma, T. H., R.Yamaguchi, R. Y., Y.Murao, Y. M., & Homma, T. (1993). A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection. Journal of the Electrochemical Society, 140, 687-692.
A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection. / T.Homma, T.Homma; R.Yamaguchi, R.Yamaguchi; Y.Murao, Y.Murao; Homma, Tetsuya.
In: Journal of the Electrochemical Society, Vol. 140, 01.03.1993, p. 687-692.Research output: Contribution to journal › Article
T.Homma, TH, R.Yamaguchi, RY, Y.Murao, YM & Homma, T 1993, 'A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection', Journal of the Electrochemical Society, vol. 140, pp. 687-692.
T.Homma TH, R.Yamaguchi RY, Y.Murao YM, Homma T. A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection. Journal of the Electrochemical Society. 1993 Mar 1;140:687-692.
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