A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections

T.Homma T.Homma, T.Katoh T.Katoh, Y.Yamada Y.Yamada, Y.Murao Y.Murao, Tetsuya Homma

Research output: Contribution to journalArticle

64 Citations (Scopus)
Original languageEnglish
Pages (from-to)2410-2414
JournalJournal of the Electrochemical Society
Volume140
Publication statusPublished - 1993 Aug 1

Cite this

A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections. / T.Homma, T.Homma; T.Katoh, T.Katoh; Y.Yamada, Y.Yamada; Y.Murao, Y.Murao; Homma, Tetsuya.

In: Journal of the Electrochemical Society, Vol. 140, 01.08.1993, p. 2410-2414.

Research output: Contribution to journalArticle

T.Homma, T.Homma ; T.Katoh, T.Katoh ; Y.Yamada, Y.Yamada ; Y.Murao, Y.Murao ; Homma, Tetsuya. / A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections. In: Journal of the Electrochemical Society. 1993 ; Vol. 140. pp. 2410-2414.
@article{3cd6f50a79834558ac41f26abdbfb2de,
title = "A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections",
author = "T.Homma T.Homma and T.Katoh T.Katoh and Y.Yamada Y.Yamada and Y.Murao Y.Murao and Tetsuya Homma",
year = "1993",
month = "8",
day = "1",
language = "English",
volume = "140",
pages = "2410--2414",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections

AU - T.Homma, T.Homma

AU - T.Katoh, T.Katoh

AU - Y.Yamada, Y.Yamada

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/8/1

Y1 - 1993/8/1

M3 - Article

VL - 140

SP - 2410

EP - 2414

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

ER -