A small-signal, one-flux analysis of short-base transport

M. A. Alam, Shin Ichi Tanaka, M. S. Lundstrom

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.

Original languageEnglish
Pages (from-to)177-182
Number of pages6
JournalSolid State Electronics
Volume38
Issue number1
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Fluxes
Ballistics
ballistics
Electron transport properties
Boltzmann equation
Bipolar transistors
bipolar transistors
transport properties
Scattering
Electrons
scattering
electrons
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

A small-signal, one-flux analysis of short-base transport. / Alam, M. A.; Tanaka, Shin Ichi; Lundstrom, M. S.

In: Solid State Electronics, Vol. 38, No. 1, 1995, p. 177-182.

Research output: Contribution to journalArticle

Alam, M. A. ; Tanaka, Shin Ichi ; Lundstrom, M. S. / A small-signal, one-flux analysis of short-base transport. In: Solid State Electronics. 1995 ; Vol. 38, No. 1. pp. 177-182.
@article{8e8606c175704429aece650df4067a8f,
title = "A small-signal, one-flux analysis of short-base transport",
abstract = "In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.",
author = "Alam, {M. A.} and Tanaka, {Shin Ichi} and Lundstrom, {M. S.}",
year = "1995",
doi = "10.1016/0038-1101(94)E0043-E",
language = "English",
volume = "38",
pages = "177--182",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - A small-signal, one-flux analysis of short-base transport

AU - Alam, M. A.

AU - Tanaka, Shin Ichi

AU - Lundstrom, M. S.

PY - 1995

Y1 - 1995

N2 - In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.

AB - In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.

UR - http://www.scopus.com/inward/record.url?scp=0029226894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029226894&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(94)E0043-E

DO - 10.1016/0038-1101(94)E0043-E

M3 - Article

VL - 38

SP - 177

EP - 182

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 1

ER -