Abstract
In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
| Original language | English |
|---|---|
| Pages (from-to) | 177-182 |
| Number of pages | 6 |
| Journal | Solid State Electronics |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1995 Jan |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Alam, M. A., Tanaka, S. I., & Lundstrom, M. S. (1995). A small-signal, one-flux analysis of short-base transport. Solid State Electronics, 38(1), 177-182. https://doi.org/10.1016/0038-1101(94)E0043-E