Abstract
In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
| Original language | English |
|---|---|
| Pages (from-to) | 177-182 |
| Number of pages | 6 |
| Journal | Solid State Electronics |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1995 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics
Cite this
A small-signal, one-flux analysis of short-base transport. / Alam, M. A.; Tanaka, Shin Ichi; Lundstrom, M. S.
In: Solid State Electronics, Vol. 38, No. 1, 1995, p. 177-182.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A small-signal, one-flux analysis of short-base transport
AU - Alam, M. A.
AU - Tanaka, Shin Ichi
AU - Lundstrom, M. S.
PY - 1995
Y1 - 1995
N2 - In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
AB - In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
UR - http://www.scopus.com/inward/record.url?scp=0029226894&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029226894&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)E0043-E
DO - 10.1016/0038-1101(94)E0043-E
M3 - Article
VL - 38
SP - 177
EP - 182
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -