A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor

Shinichi Hori; Tadashi Maeda; Hitoshi Yano; Noriaki Matsuno; Keiichi Numata; Nobuhide Yoshida; Yuji Takahashi; Tomoyuki Yamase; Robert Walkington; Hikaru Hida

doi:10.1109/ESSCIRC.2003.1257169

A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor

Shinichi Hori, Tadashi Maeda, Hitoshi Yano, Noriaki Matsuno, Keiichi Numata, Nobuhide Yoshida, Yuji Takahashi, Tomoyuki Yamase, Robert Walkington, Hikaru Hida

Department of Electronic Engineering

Research output: Contribution to journal › Conference article

Abstract

We propose a new negative source degeneration resistor (NSDR) transconductor to achieve a wide continuous-tuning range gm-C filter applicable for IEEE802.11a/b/g wireless-LANs and W-CDMA. The NSDR-transconductor using a source degeneration resistor and positive feedback differential amplifier that acts as a negative resistor. This configuration enables the equivalent source degeneration resistance to be drastically increased without degrading linearity, thus resulting in a wide gm tuning. A 6th -order elliptic low-pass filter using this NSDR-transconductor exhibits a cutoff frequency (f_c) tuning range of 1.5-12MHz, which is two times wider than that of conventional filters. Additionally, we introduce a new figure of merit (FoM) evaluating the basic filter performance. This filter shows 0.35 fj (FoM) in the IEEE802.11a mode, which is, to our best knowledge, the best value in the CMOS channel-select filters.

Original language	English
Article number	1257169
Pages (from-to)	449-452
Number of pages	4
Journal	European Solid-State Circuits Conference
DOIs	https://doi.org/10.1109/ESSCIRC.2003.1257169
Publication status	Published - 2003 Dec 1
Event	29th European Solid-State Circuits Conference, ESSCIRC 2003 - Estoril, Portugal Duration: 2003 Sep 16 → 2003 Sep 18

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ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Hori, S., Maeda, T., Yano, H., Matsuno, N., Numata, K., Yoshida, N., Takahashi, Y., Yamase, T., Walkington, R., & Hida, H. (2003). A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor. European Solid-State Circuits Conference, 449-452. [1257169]. https://doi.org/10.1109/ESSCIRC.2003.1257169

A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor. / Hori, Shinichi; Maeda, Tadashi; Yano, Hitoshi; Matsuno, Noriaki; Numata, Keiichi; Yoshida, Nobuhide; Takahashi, Yuji; Yamase, Tomoyuki; Walkington, Robert; Hida, Hikaru.

In: European Solid-State Circuits Conference, 01.12.2003, p. 449-452.

Research output: Contribution to journal › Conference article

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abstract = "We propose a new negative source degeneration resistor (NSDR) transconductor to achieve a wide continuous-tuning range gm-C filter applicable for IEEE802.11a/b/g wireless-LANs and W-CDMA. The NSDR-transconductor using a source degeneration resistor and positive feedback differential amplifier that acts as a negative resistor. This configuration enables the equivalent source degeneration resistance to be drastically increased without degrading linearity, thus resulting in a wide gm tuning. A 6th -order elliptic low-pass filter using this NSDR-transconductor exhibits a cutoff frequency (fc) tuning range of 1.5-12MHz, which is two times wider than that of conventional filters. Additionally, we introduce a new figure of merit (FoM) evaluating the basic filter performance. This filter shows 0.35 fj (FoM) in the IEEE802.11a mode, which is, to our best knowledge, the best value in the CMOS channel-select filters.",

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AU - Numata, Keiichi

AU - Yoshida, Nobuhide

AU - Takahashi, Yuji

AU - Yamase, Tomoyuki

AU - Walkington, Robert

AU - Hida, Hikaru

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Access to Document

10.1109/ESSCIRC.2003.1257169