A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamazaki

    Research output: Contribution to journalArticle

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1189-1194
    JournalIEICE Trans.Electron
    VolumeE-78-C
    Publication statusPublished - 1995 Apr 1

    Cite this

    Tokumitsu, M., Nishimura, K., Hirano, M., & Yamazaki, K. (1995). A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications. IEICE Trans.Electron, E-78-C, 1189-1194.

    A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications. / Tokumitsu, Masami; Nishimura, Kazumi; Hirano, Makoto; Yamazaki, Kimiyoshi.

    In: IEICE Trans.Electron, Vol. E-78-C, 01.04.1995, p. 1189-1194.

    Research output: Contribution to journalArticle

    Tokumitsu, M, Nishimura, K, Hirano, M & Yamazaki, K 1995, 'A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications', IEICE Trans.Electron, vol. E-78-C, pp. 1189-1194.
    Tokumitsu M, Nishimura K, Hirano M, Yamazaki K. A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications. IEICE Trans.Electron. 1995 Apr 1;E-78-C:1189-1194.
    Tokumitsu, Masami ; Nishimura, Kazumi ; Hirano, Makoto ; Yamazaki, Kimiyoshi. / A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications. In: IEICE Trans.Electron. 1995 ; Vol. E-78-C. pp. 1189-1194.
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    AU - Yamazaki, Kimiyoshi

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