A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications

Masami Tokumitsu, Kazumi Nishimura, Makoto Hirano, Kimiyoshi Yamazaki

    Research output: Contribution to journalArticle

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1189-1194
    JournalIEICE Trans.Electron
    VolumeE-78-C
    Publication statusPublished - 1995 Apr 1

    Cite this

    Tokumitsu, M., Nishimura, K., Hirano, M., & Yamazaki, K. (1995). A0.1 um Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications. IEICE Trans.Electron, E-78-C, 1189-1194.