A0.1 um Self-Aligned-Gate GaAs MESFETwith Multilayer Interconnection Structure for Ultra-High-Speed Ics

Masami Tokumitsu, Makoto Hirano, Taiichi Otsuji, Satoru Yamaguchi, Kimitoshi Yamazaki

    Research output: Contribution to journalArticle

    16 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)211-214
    JournalIEEE IEDM Tch.Dig.
    Publication statusPublished - 1996 Apr 1

    Cite this

    Tokumitsu, M., Hirano, M., Otsuji, T., Yamaguchi, S., & Yamazaki, K. (1996). A0.1 um Self-Aligned-Gate GaAs MESFETwith Multilayer Interconnection Structure for Ultra-High-Speed Ics. IEEE IEDM Tch.Dig., 211-214.