Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

T. Yanagi, Y. Ohki, Hiroyuki Nishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
Pages1088-1091
Number of pages4
Volume3
Publication statusPublished - 2003
EventProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya
Duration: 2003 Jun 12003 Jun 5

Other

OtherProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials
CityNagoya
Period03/6/103/6/5

Fingerprint

Plasma CVD
Light absorption
Photosensitivity
Photons
Irradiation
Thin films
Polymers
Germanium
Oxygen vacancies
Plasma enhanced chemical vapor deposition
Hydrogen
Vapors
Oxygen
Defects
tetraethoxysilane

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yanagi, T., Ohki, Y., & Nishikawa, H. (2003). Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. In Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials (Vol. 3, pp. 1088-1091)

Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. / Yanagi, T.; Ohki, Y.; Nishikawa, Hiroyuki.

Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. Vol. 3 2003. p. 1088-1091.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yanagi, T, Ohki, Y & Nishikawa, H 2003, Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. in Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. vol. 3, pp. 1088-1091, Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, 03/6/1.
Yanagi T, Ohki Y, Nishikawa H. Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. In Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. Vol. 3. 2003. p. 1088-1091
Yanagi, T. ; Ohki, Y. ; Nishikawa, Hiroyuki. / Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. Vol. 3 2003. pp. 1088-1091
@inproceedings{9340c22280db4539849679f4c9b303f8,
title = "Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane",
abstract = "Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.",
author = "T. Yanagi and Y. Ohki and Hiroyuki Nishikawa",
year = "2003",
language = "English",
volume = "3",
pages = "1088--1091",
booktitle = "Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials",

}

TY - GEN

T1 - Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

AU - Yanagi, T.

AU - Ohki, Y.

AU - Nishikawa, Hiroyuki

PY - 2003

Y1 - 2003

N2 - Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

AB - Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

UR - http://www.scopus.com/inward/record.url?scp=0141974253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141974253&partnerID=8YFLogxK

M3 - Conference contribution

VL - 3

SP - 1088

EP - 1091

BT - Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials

ER -