Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

T. Yanagi, Y. Ohki, H. Nishikawa

Research output: Contribution to conferencePaper

Abstract

Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

Original languageEnglish
Pages1088-1091
Number of pages4
Publication statusPublished - 2003 Oct 20
EventProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya, Japan
Duration: 2003 Jun 12003 Jun 5

Conference

ConferenceProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials
CountryJapan
CityNagoya
Period03/6/103/6/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Absorption changes induced by UV-photon irradiation in Ge-doped SiO<sub>2</sub> thin films fabricated by plasma CVD method from tetraethoxysilane'. Together they form a unique fingerprint.

  • Cite this

    Yanagi, T., Ohki, Y., & Nishikawa, H. (2003). Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. 1088-1091. Paper presented at Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, Japan.