Abstract
We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 977-984 |
| Number of pages | 8 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1999 May |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Accurate HJFET current-voltage model including temperature dependence for a circuit simulator. / Matsuno, Noriaki; Yano, Hitoshi; Hida, Hikaru; Maeda, Tadashi.
In: Solid-State Electronics, Vol. 43, No. 5, 05.1999, p. 977-984.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Accurate HJFET current-voltage model including temperature dependence for a circuit simulator
AU - Matsuno, Noriaki
AU - Yano, Hitoshi
AU - Hida, Hikaru
AU - Maeda, Tadashi
PY - 1999/5
Y1 - 1999/5
N2 - We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.
AB - We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.
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UR - http://www.scopus.com/inward/citedby.url?scp=0032674321&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(99)00051-9
DO - 10.1016/S0038-1101(99)00051-9
M3 - Article
VL - 43
SP - 977
EP - 984
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 5
ER -