Accurate HJFET current-voltage model including temperature dependence for a circuit simulator

Noriaki Matsuno; Hitoshi Yano; Hikaru Hida; Tadashi Maeda

doi:10.1016/S0038-1101(99)00051-9

Accurate HJFET current-voltage model including temperature dependence for a circuit simulator

Noriaki Matsuno, Hitoshi Yano, Hikaru Hida, Tadashi Maeda

Research output: Contribution to journal › Article › peer-review

Abstract

We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, g_m, drain conductance, g_D, and threshold voltage, V_T, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the g_m, g_D and V_T descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.

Original language	English
Pages (from-to)	977-984
Number of pages	8
Journal	Solid-State Electronics
Volume	43
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1101(99)00051-9
Publication status	Published - 1999 May
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Accurate HJFET current-voltage model including temperature dependence for a circuit simulator",

abstract = "We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.",

author = "Noriaki Matsuno and Hitoshi Yano and Hikaru Hida and Tadashi Maeda",

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AU - Yano, Hitoshi

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AU - Maeda, Tadashi

PY - 1999/5

Y1 - 1999/5

N2 - We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.

AB - We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.

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