TY - JOUR
T1 - Advances in multilayer graphene processes for metallization and high-frequency devices
AU - Ueno, Kazuyoshi
N1 - Funding Information:
Our research was supported by JST CREST (Grant No. JPMJCR1532), NEDO LEAP, JSPS KAKENHI (Grant Nos. 26420319, 18K94289), the Research Center for Green Innovation of SIT, and International Research Center for Green Electronics of SIT. I gratefully acknowledge the following: Ken Takeuchi, Hiroki Ago, Susumu Okada, Shinji Yokogawa, Toshio Kobayashi and the CREST members for collaboration and fruitful discussions. Tadashi Sakai, Akihiro Kajita, Yuji Awano, Rika Matsumoto, Hisao Miyazaki and the LEAP members for collaboration and fruitful discussions. Kaustav Banerjee and his group of University of California, Santa Barbara, for collaboration. Zsolt Tokei, Inge Asselberghs, Xiangyu Wu, Swati Achra of IMEC for collaboration. The students who conducted research at the Nanoelectronics Laboratories of SIT.
Publisher Copyright:
© 2022 The Japan Society of Applied Physics.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - Multilayer graphene (MLG) has been proposed as an alternative material for nanometer-wide interconnects. However, it has not been put to practical use, since the process technology that leads to practical use has been immature. Recent advances in MLG processes and applications, such as MLG-capped copper interconnects, the direct deposition of MLG by solid-phase deposition (SPD) at a low temperature, stable intercalation doping to MLG and selective chemical vapor deposition (CVD) of high-crystallinity MLG for inductor and antenna applications are reviewed. Based on these advances, MLG is considered to be approaching the stage of practical application for device metallization and high-frequency devices. Based on the characteristics of MLG as a conductor and recent development trends, the prospects and issues regarding the future practical use of MLG graphene are discussed.
AB - Multilayer graphene (MLG) has been proposed as an alternative material for nanometer-wide interconnects. However, it has not been put to practical use, since the process technology that leads to practical use has been immature. Recent advances in MLG processes and applications, such as MLG-capped copper interconnects, the direct deposition of MLG by solid-phase deposition (SPD) at a low temperature, stable intercalation doping to MLG and selective chemical vapor deposition (CVD) of high-crystallinity MLG for inductor and antenna applications are reviewed. Based on these advances, MLG is considered to be approaching the stage of practical application for device metallization and high-frequency devices. Based on the characteristics of MLG as a conductor and recent development trends, the prospects and issues regarding the future practical use of MLG graphene are discussed.
KW - deposition
KW - doping
KW - high-frequency device
KW - intercalation
KW - interconnect
KW - metallization
KW - multilayer graphene
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U2 - 10.35848/1347-4065/ac8884
DO - 10.35848/1347-4065/ac8884
M3 - Article
AN - SCOPUS:85141916637
SN - 0021-4922
VL - 62
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - SA
M1 - SA0802
ER -