Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface

M. Toyama, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)226-227
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

Cite this

Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface. / Toyama, M.; Kita, K.; Kyuno, K.; Toriumi, A.

In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), 01.09.2004, p. 226-227.

Research output: Contribution to journalArticle

@article{fd76638729e84067835acc457c26775b,
title = "Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface",
author = "M. Toyama and K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "9",
day = "1",
language = "English",
pages = "226--227",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface

AU - Toyama, M.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 226

EP - 227

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -