Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD

H. Ishikawa, N. Nakada, G. Y. Zhao, T. Egawa, T. Jimbo, M .Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)Fr-15
JournalDefault journal
Publication statusPublished - 1998 Sep 1

Cite this

Ishikawa, H., Nakada, N., Zhao, G. Y., Egawa, T., Jimbo, T., & .Umeno, M. (1998). Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD. Default journal, Fr-15.

Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD. / Ishikawa, H.; Nakada, N.; Zhao, G. Y.; Egawa, T.; Jimbo, T.; .Umeno, M.

In: Default journal, 01.09.1998, p. Fr-15.

Research output: Contribution to journalArticle

Ishikawa, H, Nakada, N, Zhao, GY, Egawa, T, Jimbo, T & .Umeno, M 1998, 'Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD', Default journal, pp. Fr-15.
Ishikawa, H. ; Nakada, N. ; Zhao, G. Y. ; Egawa, T. ; Jimbo, T. ; .Umeno, M. / Al0.27Ga0.73N/GaN distributed Bragg Reflector grown by atmospheric pressure MOCVD. In: Default journal. 1998 ; pp. Fr-15.
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AU - Jimbo, T.

AU - .Umeno, M

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