AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer

Y.Miyoshi Y.Miyoshi, Y.Miyoshi S.TanakaN.Goto K.Honjo, Shinichi Tanaka

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)661-666
JournalInt. Symp. on Compound Semiconductors (ISCS)
Publication statusPublished - 1995 Jan 1

Cite this

AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer. / Y.Miyoshi, Y.Miyoshi; K.Honjo, Y.Miyoshi S.TanakaN.Goto; Tanaka, Shinichi.

In: Int. Symp. on Compound Semiconductors (ISCS), 01.01.1995, p. 661-666.

Research output: Contribution to journalArticle

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AU - Y.Miyoshi, Y.Miyoshi

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AU - Tanaka, Shinichi

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JO - Int. Symp. on Compound Semiconductors (ISCS)

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