AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Hao Jiang; T. Egawa; H. Ishikawa

doi:10.1109/LPT.2006.877351

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Hao Jiang, T. Egawa, H. Ishikawa

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10^-10 A/cm² at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm², a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 10¹⁴ cm · Hz^1/2W^-1 was estimated at 256 nm under zero bias.

Original language	English
Pages (from-to)	1353-1355
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2006.877351
Publication status	Published - 2006 Jun 15
Externally published	Yes

Keywords

AlGaN
Dark current
Responsivity
Schottky photodiode
Solar blind

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{009361c4a5ab4ed58eb9d9717ffcdbe4,

title = "AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC",

abstract = "Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.",

keywords = "AlGaN, Dark current, Responsivity, Schottky photodiode, Solar blind",

author = "Hao Jiang and T. Egawa and H. Ishikawa",

note = "Funding Information: Manuscript received March 8, 2006; revised April 12, 2006. This work was supported by Intellectual Cluster Headquarters, Aichi Science and Technology Foundation. H. Jiang and T. Egawa are with the Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan (e-mail: jianghao_jp@yahoo.com). H. Ishikawa is with the Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan. Digital Object Identifier 10.1109/LPT.2006.877351",

year = "2006",

month = jun,

day = "15",

doi = "10.1109/LPT.2006.877351",

language = "English",

volume = "18",

pages = "1353--1355",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

AU - Jiang, Hao

AU - Egawa, T.

AU - Ishikawa, H.

N1 - Funding Information: Manuscript received March 8, 2006; revised April 12, 2006. This work was supported by Intellectual Cluster Headquarters, Aichi Science and Technology Foundation. H. Jiang and T. Egawa are with the Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan (e-mail: jianghao_jp@yahoo.com). H. Ishikawa is with the Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan. Digital Object Identifier 10.1109/LPT.2006.877351

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.

AB - Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.

KW - AlGaN

KW - Dark current

KW - Responsivity

KW - Schottky photodiode

KW - Solar blind

UR - http://www.scopus.com/inward/record.url?scp=33745174483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745174483&partnerID=8YFLogxK

U2 - 10.1109/LPT.2006.877351

DO - 10.1109/LPT.2006.877351

M3 - Article

AN - SCOPUS:33745174483

VL - 18

SP - 1353

EP - 1355

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 12

ER -

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Abstract

Keywords

ASJC Scopus subject areas

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