AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Hao Jiang, T. Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.

Original languageEnglish
Pages (from-to)1353-1355
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number12
DOIs
Publication statusPublished - 2006 Jun 15
Externally publishedYes

Fingerprint

Dark currents
Photodiodes
Quantum efficiency
photodiodes
Current density
Lighting
Wavelength
Substrates
dark current
rejection
Temperature
radiant flux density
quantum efficiency
illumination
current density
room temperature
wavelengths
aluminum gallium nitride

Keywords

  • AlGaN
  • Dark current
  • Responsivity
  • Schottky photodiode
  • Solar blind

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC. / Jiang, Hao; Egawa, T.; Ishikawa, Hiroyasu.

In: IEEE Photonics Technology Letters, Vol. 18, No. 12, 15.06.2006, p. 1353-1355.

Research output: Contribution to journalArticle

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abstract = "Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21{\%}. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.",
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