Abstract
Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.
Original language | English |
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Pages (from-to) | 1353-1355 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 18 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2006 Jun 15 |
Externally published | Yes |
Keywords
- AlGaN
- Dark current
- Responsivity
- Schottky photodiode
- Solar blind
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering