Abstract
Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.
| Original language | English |
|---|---|
| Pages (from-to) | 1353-1355 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 18 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2006 Jun 15 |
| Externally published | Yes |
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Keywords
- AlGaN
- Dark current
- Responsivity
- Schottky photodiode
- Solar blind
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)
Cite this
AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC. / Jiang, Hao; Egawa, T.; Ishikawa, Hiroyasu.
In: IEEE Photonics Technology Letters, Vol. 18, No. 12, 15.06.2006, p. 1353-1355.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC
AU - Jiang, Hao
AU - Egawa, T.
AU - Ishikawa, Hiroyasu
PY - 2006/6/15
Y1 - 2006/6/15
N2 - Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.
AB - Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.
KW - AlGaN
KW - Dark current
KW - Responsivity
KW - Schottky photodiode
KW - Solar blind
UR - http://www.scopus.com/inward/record.url?scp=33745174483&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745174483&partnerID=8YFLogxK
U2 - 10.1109/LPT.2006.877351
DO - 10.1109/LPT.2006.877351
M3 - Article
AN - SCOPUS:33745174483
VL - 18
SP - 1353
EP - 1355
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 12
ER -