AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Hao Jiang, T. Egawa, H. Ishikawa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.

Original languageEnglish
Pages (from-to)1353-1355
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number12
DOIs
Publication statusPublished - 2006 Jun 15

Keywords

  • AlGaN
  • Dark current
  • Responsivity
  • Schottky photodiode
  • Solar blind

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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