AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, Hiroyasu Ishikawa, T. Egawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have demonstrated dual-gate AlGaN/GaN high-electron-mobility transistors on SiC substrates for high-power mixers and examined DC and up-conversion RF measurements with drain-source bias voltages (V DS) to analyze the possible output level The 0.7×300 μm-gate device exhibited the maximum transconductance of 47 mS, maximum RF power of 19.6 dBm and up-conversion gain of 11 dB at 2 GHz when V DS = 15 V. For V DS of over 15 V, the devices occasionally broke down, because, although the device can handle more drain current, but the voltage swing reached the breakdown voltage of about 30 V. These results indicate that a Watt-class output mixer can be easily achieved with this simple dual-gate structure.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2623-2626
Number of pages4
Volume2
Edition7
DOIs
Publication statusPublished - 2005
Externally publishedYes

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high electron mobility transistors
output
electric potential
transconductance
electrical faults
breakdown
direct current

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H., & Egawa, T. (2005). AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2623-2626) https://doi.org/10.1002/pssc.200461347

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers. / Shiojima, K.; Makimura, T.; Kosugi, T.; Sugitani, S.; Shigekawa, N.; Ishikawa, Hiroyasu; Egawa, T.

Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. p. 2623-2626.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shiojima, K, Makimura, T, Kosugi, T, Sugitani, S, Shigekawa, N, Ishikawa, H & Egawa, T 2005, AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers. in Physica Status Solidi C: Conferences. 7 edn, vol. 2, pp. 2623-2626. https://doi.org/10.1002/pssc.200461347
Shiojima K, Makimura T, Kosugi T, Sugitani S, Shigekawa N, Ishikawa H et al. AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers. In Physica Status Solidi C: Conferences. 7 ed. Vol. 2. 2005. p. 2623-2626 https://doi.org/10.1002/pssc.200461347
Shiojima, K. ; Makimura, T. ; Kosugi, T. ; Sugitani, S. ; Shigekawa, N. ; Ishikawa, Hiroyasu ; Egawa, T. / AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers. Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. pp. 2623-2626
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