AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu, Juro Mita, Masanori Ito, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.

Original languageEnglish
Pages (from-to)259-265
Number of pages7
JournalECS Transactions
Volume1
Issue number2
Publication statusPublished - 2005 Dec 1
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

ASJC Scopus subject areas

  • Engineering(all)

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    Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H., & Egawa, T. (2005). AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. ECS Transactions, 1(2), 259-265.