In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.
|Number of pages||7|
|Publication status||Published - 2005 Dec 1|
|Event||43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States|
Duration: 2005 Oct 16 → 2005 Oct 21
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