AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu, Juro Mita, Masanori Ito, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency f T of 56 GHz and the maximum oscillation frequency f max of 115 GHz.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ.J. Wang, R.C. Fitch, R. Fen
Pages259-265
Number of pages7
Volume1
Edition2
Publication statusPublished - 2005
Externally publishedYes
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Other

Other43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
CountryUnited States
CityLos Angeles, CA
Period05/10/1605/10/21

Fingerprint

High electron mobility transistors
Electrodes
Substrates
Cutoff frequency
Contact resistance
Fabrication
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H., & Egawa, T. (2005). AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. In J. J. Wang, R. C. Fitch, & R. Fen (Eds.), ECS Transactions (2 ed., Vol. 1, pp. 259-265)

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. / Kaifu, Katsuaki; Mita, Juro; Ito, Masanori; Sano, Yoshiaki; Ishikawa, Hiroyasu; Egawa, Takashi.

ECS Transactions. ed. / J.J. Wang; R.C. Fitch; R. Fen. Vol. 1 2. ed. 2005. p. 259-265.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kaifu, K, Mita, J, Ito, M, Sano, Y, Ishikawa, H & Egawa, T 2005, AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. in JJ Wang, RC Fitch & R Fen (eds), ECS Transactions. 2 edn, vol. 1, pp. 259-265, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.
Kaifu K, Mita J, Ito M, Sano Y, Ishikawa H, Egawa T. AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. In Wang JJ, Fitch RC, Fen R, editors, ECS Transactions. 2 ed. Vol. 1. 2005. p. 259-265
Kaifu, Katsuaki ; Mita, Juro ; Ito, Masanori ; Sano, Yoshiaki ; Ishikawa, Hiroyasu ; Egawa, Takashi. / AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. ECS Transactions. editor / J.J. Wang ; R.C. Fitch ; R. Fen. Vol. 1 2. ed. 2005. pp. 259-265
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