An accurate HJFET capacitance-voltage model for implementation with a circuit simulator

Noriaki Matsuno; Hitoshi Yano; Hikaru Hida; Tadashi Maeda

doi:10.1109/16.556146

An accurate HJFET capacitance-voltage model for implementation with a circuit simulator

Noriaki Matsuno, Hitoshi Yano, Hikaru Hida, Tadashi Maeda

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements.

Original language	English
Pages (from-to)	373-378
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/16.556146
Publication status	Published - 1997
Externally published	Yes

Keywords

Cad model
Circuit simulation
Gaas
Gate capacitance
HJFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.556146

Cite this

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abstract = "We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements.",

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AU - Matsuno, Noriaki

AU - Yano, Hitoshi

AU - Hida, Hikaru

AU - Maeda, Tadashi

PY - 1997

Y1 - 1997

N2 - We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements.

AB - We present a new accurate HJFET capacitance model to implement with a circuit simulator. This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range. The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage. It also takes into account the field dependence of the 2DEG mobility, which is very strong for deep sub-micron devices. The model for parasitic MESFET capacitance is based on the formula for a Schottky diode. Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design. The simulated results agree well with the measurements.

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KW - Circuit simulation

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KW - Gate capacitance

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An accurate HJFET capacitance-voltage model for implementation with a circuit simulator

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Keywords

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