An Asymmetric Side Wall Process for High Performance LDD MOSFET's

T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)186-190
JournalIEEE Transactions on Electron Devices
Volume41
Publication statusPublished - 1994 Feb 1

Cite this

T.Horiuchi, T. H., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O., & Homma, T. (1994). An Asymmetric Side Wall Process for High Performance LDD MOSFET's. IEEE Transactions on Electron Devices, 41, 186-190.