An Asymmetric Side Wall Process for High Performance LDD MOSFET's

T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)186-190
JournalIEEE Transactions on Electron Devices
Volume41
Publication statusPublished - 1994 Feb 1

Cite this

T.Horiuchi, T. H., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O., & Homma, T. (1994). An Asymmetric Side Wall Process for High Performance LDD MOSFET's. IEEE Transactions on Electron Devices, 41, 186-190.

An Asymmetric Side Wall Process for High Performance LDD MOSFET's. / T.Horiuchi, T.Horiuchi; T.Homma, T.Homma; Y.Murao, Y.Murao; K.Okumura, K.Okumura; Homma, Tetsuya.

In: IEEE Transactions on Electron Devices, Vol. 41, 01.02.1994, p. 186-190.

Research output: Contribution to journalArticle

T.Horiuchi, TH, T.Homma, TH, Y.Murao, YM, K.Okumura, KO & Homma, T 1994, 'An Asymmetric Side Wall Process for High Performance LDD MOSFET's', IEEE Transactions on Electron Devices, vol. 41, pp. 186-190.
T.Horiuchi TH, T.Homma TH, Y.Murao YM, K.Okumura KO, Homma T. An Asymmetric Side Wall Process for High Performance LDD MOSFET's. IEEE Transactions on Electron Devices. 1994 Feb 1;41:186-190.
T.Horiuchi, T.Horiuchi ; T.Homma, T.Homma ; Y.Murao, Y.Murao ; K.Okumura, K.Okumura ; Homma, Tetsuya. / An Asymmetric Side Wall Process for High Performance LDD MOSFET's. In: IEEE Transactions on Electron Devices. 1994 ; Vol. 41. pp. 186-190.
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